Thursday, December 08, 2016
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Microsoft Unveils Windows 10 for Qualcomm Chips, "Project Evo" PCs For Mixed Reality And Gaming
Samsung's First Foldable Phone May Actually Not Have A Foldable Screen
Apple In Talks With Hollywood For Early Movie Rental
Bluetooth 5 Technology Brings Advancements In Terms Of Range, Speed And Capacity
Global Virtual Reality Association Established To Promote VR
Fitbit Acquired Assets from Pebble
GIGABYTE Announces Xtreme Gaming Peripherals, Including A Gaming Chair
Scythe Releases Improved Mugen 5 CPU Cooler Armed With Kaze Flex 120 Fan
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > General Computing > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, June 25, 2008
Samsung, Hynix to Develop Next Generation STT-MRAM


Samsung and Hynix Semiconductor, the world's top two computer memory chip makers, said Wednesday that they will jointly research and develop spin-torque-transfer magnetic-random-access-memory (STT-MRAM) chips.

The companies made the anouncement in Seoul, the Korean Times reports.

Samsung and Hynix said cooperative work to establish worldwide industrial standards in the 450mm wafer sector, which is expected to replace the 300mm wafer, will begin in August.

STT-MRAM is a non-volatile random access memory which uses magnetic elements and generally operates in a fashion similar to core. STT-MRAM allow for much higher densities, but is falling behind Flash mainly due to competitive pressures in the Flash market.

Only one MRAM chip has entered production to date, Freescale Semiconductor's 4 Mbit part, and using the techniques in this particular design it is unlikely to grow any time soon.

The global market for the new STT-MRAM chip is expected to mature around 2012, according to the companies.

If the joint R&D venture on STT-MRAM, to be launched in September, is successful, the companies will be able to fend off Japanese competitors trying to regain dominance in the semiconductor sector and generate an estimated $500 million worth of royalty earnings.


Previous
Next
Pioneer's 2 new EX Speakers added for high-end range        All News        LG Unveils New European Design Centre
Matsushita Shareholders Approve Name Change to "Panasonic Corporation"     General Computing News      F-Secure Reports Malware Growth at a Higher level Than Ever Before

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung's First Foldable Phone May Actually Not Have A Foldable Screen
Western Digital Renews Patent Cross-License Agreement with Samsung
U.S. Supreme Court Rules in Favor of Samsung in Smartphone Patent Suit
KAIST Sues Samsung, Qualcomm And Globalfoundries Over FinFET Patent Infringement
Samsung Offers Second Gear S2 Update
Samsung Gear S3 Features Lonely Planet's Travel App, Guides and New Watchfaces
Samsung Galaxy S8 To Feature Automatic Focus Function to Its Front Camera
Samsung Investors And Executives Meet to Discuss Company Overhaul
Samsung Dominates The Global Mobile DRAM Market
Samsung To Design Its Own RiSC-V Micro-controller For IoT Devices
Samsung Display To Convert LCD TV Lines Into OLED Phone Lines
Samsung Group Offices Raided in South Korea Scandal

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2016 - All rights reserved -
Privacy policy - Contact Us .