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 Home > News > General Computing > Intel, ...
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Monday, November 24, 2008
Intel, Micron Move into Mass Production with 34nm NAND Flash


Intel and Micron today announced mass production of their jointly developed 34nm, 32 gigabit multi-level cell (MLC) NAND flash memory device.

Developed and manufactured by the companies? NAND flash joint venture, IM Flash Technologies (IMFT), the process technology is the most advanced process available on the market and enables the industry?s only monolithic 32 Gb NAND chip that fits into a standard 48-lead thin small-outline package (TSOP). The companies are ahead of schedule with 34nm NAND production, expecting their Lehi facility to have transitioned more than 50 percent of its capacity to 34nm by year?s end.

The 34nm, 32 Gb chips are manufactured on 300 mm wafers. Measuring just 172mm, less than the size of a thumbnail, the 34nm, 32 Gb chip will enable high-density solid-state storage in small form factor applications including digital cameras, personal music players and digital camcorders. Additionally, the chip will enable more cost-effective solid-state drives, increasing their current storage capacity.

The companies also plan to begin sampling lower density multi-level cell (MLC) and single-level cell (SLC) products using the 34nm process technology in early 2009.


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