Saturday, December 03, 2016
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Apple Sent Letter NHTSA Asking About Autonomous Vehicle Guidelines
Apple Blames Battery For Random iPhone 6s Shutdowns
Microsoft Stores Reveal Xbox Discounts And Offers
Researcher Bypasses The iOS Activation Lock
Facebook To Offer $20 million To Improve Silicon Valley Communities
Xiaomi Launches Voice -controller Mi Wi-Fi Speaker
Xiaomi "Denies" Mi MIX Nano Existence
Nokia D1C Specs Leak
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > General Computing > Intel, ...
Last 7 Days News : SU MO TU WE TH FR SA All News

Monday, November 24, 2008
Intel, Micron Move into Mass Production with 34nm NAND Flash


Intel and Micron today announced mass production of their jointly developed 34nm, 32 gigabit multi-level cell (MLC) NAND flash memory device.

Developed and manufactured by the companies? NAND flash joint venture, IM Flash Technologies (IMFT), the process technology is the most advanced process available on the market and enables the industry?s only monolithic 32 Gb NAND chip that fits into a standard 48-lead thin small-outline package (TSOP). The companies are ahead of schedule with 34nm NAND production, expecting their Lehi facility to have transitioned more than 50 percent of its capacity to 34nm by year?s end.

The 34nm, 32 Gb chips are manufactured on 300 mm wafers. Measuring just 172mm², less than the size of a thumbnail, the 34nm, 32 Gb chip will enable high-density solid-state storage in small form factor applications including digital cameras, personal music players and digital camcorders. Additionally, the chip will enable more cost-effective solid-state drives, increasing their current storage capacity.

The companies also plan to begin sampling lower density multi-level cell (MLC) and single-level cell (SLC) products using the 34nm process technology in early 2009.


Previous
Next
Spamer to Pay facebook $873.3 Million        All News        Plextor Announces New Lineup of Optical Drives with PlexUTILITIES Diagnostic Software
Spamer to Pay facebook $873.3 Million     General Computing News      Korean Scientists Claim Breakthrough in OLED screen Technology

Get RSS feed Easy Print E-Mail this Message

Related News
Intel Extreme Masters Season 11 World Championship Returns to Katowice, Poland
Intel Teams Up With Delphi and Mobileye for Self-Driving Cars
A Closer Look At SK Hynix's 3D NAND
Go Master Cho Wins Final Game Against DeepZenGo AI Platform
Intel Unveils Strategy for Artificial Intelligence
Intel Prepares its AI Strategy, Announces New Xeon Chips And An FPGA Card
GE Buts Artificial Intelligence Startups
Intel Could Add Wi-Fi and USB 3.1 Support In Future Chipsets
Facebook Turns To AI To Offer New Experiences
SK hynix To Start Mass Production Of 48-layer 3D-NAND Chips
Toshiba Expands 3D Flash Memory Production Capacity In New Fabrication Facility at Yokkaichi
Intel Announces Drone Designed For Light Shows

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2016 - All rights reserved -
Privacy policy - Contact Us .