Saturday, November 25, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Websites Track Everything You Do, Researchers Found
Atomic Switches Pave The Way For Neuromorphic Chipsets
Samsung to Showcase Large Micro LED TV at CES: report
Samsung Foundry in Advanced Discussions With New Customers for 7nm Chips
Tesla Finished Installing the World's Largest Mega-battery in Australia Within 100 Days
Apple Applies for Patent on Foldable Display
HP Patches Code execution Bug in Enterprise Printers
YouTube Takes More Steps to Tackle Down Videos Inappropriate for Minors
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > General Computing > Intel, ...
Last 7 Days News : SU MO TU WE TH FR SA All News

Monday, November 24, 2008
Intel, Micron Move into Mass Production with 34nm NAND Flash


Intel and Micron today announced mass production of their jointly developed 34nm, 32 gigabit multi-level cell (MLC) NAND flash memory device.

Developed and manufactured by the companies? NAND flash joint venture, IM Flash Technologies (IMFT), the process technology is the most advanced process available on the market and enables the industry?s only monolithic 32 Gb NAND chip that fits into a standard 48-lead thin small-outline package (TSOP). The companies are ahead of schedule with 34nm NAND production, expecting their Lehi facility to have transitioned more than 50 percent of its capacity to 34nm by year?s end.

The 34nm, 32 Gb chips are manufactured on 300 mm wafers. Measuring just 172mm², less than the size of a thumbnail, the 34nm, 32 Gb chip will enable high-density solid-state storage in small form factor applications including digital cameras, personal music players and digital camcorders. Additionally, the chip will enable more cost-effective solid-state drives, increasing their current storage capacity.

The companies also plan to begin sampling lower density multi-level cell (MLC) and single-level cell (SLC) products using the 34nm process technology in early 2009.


Previous
Next
Spamer to Pay facebook $873.3 Million        All News        Plextor Announces New Lineup of Optical Drives with PlexUTILITIES Diagnostic Software
Spamer to Pay facebook $873.3 Million     General Computing News      Korean Scientists Claim Breakthrough in OLED screen Technology

Get RSS feed Easy Print E-Mail this Message

Related News
U.S. Government Warns Businesses About Vulnerabilities Of Management Engine in Intel Chips
Samsung to set up AI Research Center
Samsung Forecast to Top Intel as Larger Semiconductor Supplier in 2017
Samsung, SK Hynix and Micron Lead the Server DRAM Market
Micron's 32GB NVDIMM Delivers 2933 MT/s Speeds to Eliminate Storage Bottlenecks
Intel Doubles Capacity of the Optane SSD DC P4800X
AMD's Raja Koduri Joins Intel as Chief Architect for High-End, Discrete Graphics Solutions
New Intel Core Processor Combines High-Performance CPU with Custom Discrete Graphics from AMD
Intel to Add AMD Radeon Graphics to New Laptop Processor
Intel Launches the Blazing-Fast Optane 900P SSD
Intel Raises Full Year Revenue, Profit Forecast
ARM-based Intel Stratix 10 FPGA Launches for 5G, NFV and Data Centers

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .