Elpida Memory, Japan's global supplier of Dynamic Random Access Memory (DRAM), today announced that it has completed development of a 50nm process DDR3 SDRAM.
The new DRAM product features very low power consumption,
2.5Gbps ultra high speed and a 1.2V low voltage operation
based on the industry's smallest chip size.
The new 50nm process DDR3 SDRAM was developed using the
193nm (ArF) immersion lithography technology and copper
interconnect technology and has a chip size of less than
40mm2. Also, the new SDRAM operates on not only DDR3
standard 1.5V supply voltage but even lower voltages of
1.35V and 1.2V and contributes to the low-power operations
of high-density memory systems such as servers and data
centers.
Features of the new 50nm process DDR3 SDRAM
- Data rate: 800Mbps, 1066Mbps, 1333Mbps, 1600Mbps,
1866Mbps, 2133Mbps and 2500Mbps
- Operating voltage: 1.2V, 1.35V, 1.5V
- Low electric current: A maximum 50% reduction (IDD4)
compared to 70nm process DRAM
The new DDR3 SDRAM will initially find applications in
high-end desktop PCs. Applications are possible elsewhere
based on the current shift away from DDR2 SDRAMs in
notebook PCs and server equipment.
Mass production of the new 50nm process DDR3 SDRAM is
scheduled to begin in the January-March 2009 quarter.