Mitsubishi Electric announced today the launch of a
638-nanometer (nm) wavelength red laser diode (LD) offering an
output power of 1W, the world's highest among 638 nm band LDs.
The ML501P73 diode is ideal for pico projectors and other
portable display systems that require a high-brightness red
light source. Sample shipments will begin on November 18, 2010.
Pico projectors have drawn much attention because they can be
embedded in or connected to mobile systems such as cellular
phones and laptop computers. LDs are widely used as light
sources for these projectors for their ability to project a
wider range of colors compared to lamp-based projectors. LDs
deliver higher output while consuming less power than light
emitting diodes (LEDs), extending battery life. LDs also enable
focus-free operation because optical systems with great depth
of field can be used with laser beams.
At high temperatures, the output power of red LDs with
wavelengths shorter than 640 nm was not sufficient for high
brightness projector applications. Mitsubishi Electric has
applied window mirror structures and epitaxial growth
technology to develop an output power of 1W at a 638-nm lasing
1) Highest recorded output power of 1 W at 638 nm for micro
- The product offers a pulsed output power of 1W, currently the
world's highest in 638 nm band
- Luminosity as a red light source exceeds 120 lumens (lm) due
to lasing at short wavelength
- The product has an industry-leading electrical conversion
ratio of 35% at 1W at a temperature of 25 degrees C, enabling
the reduction in power consumption
2) Operational at temperatures between -5 degrees C and + 40
The product can emit 1W in pulsed output and 0.5W in continuous
waves within an operating range of -5 degrees C to + 40 degrees
C. In the pulse condition, the duty ratio is less than 33% and
the frequency is higher than 50Hz.