Saturday, August 29, 2015
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Alienware Brings Liquid Cooling and Dynamic Overclocking to Holiday Lineup
Razer Launches Wildcat Xbox One Controller And Upgraded Nabu Smartband
Workstation Market Shippments Rebound In Q2
Google Will Help You Find Your Plumber
IFA 2015: What We Know So Far
Acer Liquid Z410 And Liquid Jade Z Phones Released
Huawei Honor Phones Coming To Europe
AMD Radeon R9 370X Graphics Card Launched In Asia
Active Discussions
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
How to burn a backup copy of The Frozen Throne
Help make DVDInfoPro better with dvdinfomantis!!!
Copied dvd's say blank in computer only
menu making
Optiarc AD-7260S review
 Home > News > PC Parts > Micron ...
Last 7 Days News : SU MO TU WE TH FR SA All News

Thursday, November 03, 2011
Micron And A*STAR Data Storage Institute to Develop Spin Transfer Torque MRAM


Micron Technology and Singapore's A*STAR Data Storage Institute (DSI) will collaborate on the development of spin transfer torque magnetic random access memory (STT-MRAM), a promising alternative non-volatile memory technology for next-generation storage.

Current commercial solid state drives (SSDs) use NAND Flash memory, a type of non-volatile memory, to store data. Demand for these types of drives has been increasing rapidly. SSDs, unlike hard disk drives (HDDs), contain no moving parts and are less susceptible to physical shock and vibration than HDDs. SSDs are also capable of retaining their memory without power and are very durable. However, as the memory industry continues to scale NAND Flash memory, it sees issues such as limited endurance and high write power. Therefore, the industry is currently researching alternative non-volatile memory solutions such as STT-MRAM. STT-MRAM also has potential to address technology scaling roadmap challenges of volatile memory such as Dynamic RAM (DRAM) and hence can enhance the performance for many volatile memory applications as well.

As part of the collaboration, Micron and DSI will invest in joint research to develop high-density STT-MRAM devices during the next three years. Researchers from both Micron and DSI will work together to develop high-density STT-MRAM devices.


Previous
Next
Samsung Exits RealD 3D Technology Deal        All News        HP Introduces Slate Tablet PC for Business
New AMD CEO To Cut Company's Workforce     PC Parts News      HP Introduces Slate Tablet PC for Business

Get RSS feed Easy Print E-Mail this Message

Related News
ATP Announces Agreement with Micron for Legacy DRAM Module Support
Seagate Micron Alliance Introduce New SAS Solid State Drive
New Memory Memory Chip Is 1,000 Times Faster Than Flash
Micron M510DC SATA Solid State Drive Released - Company A Bid Target By Chinese
Low Memory Prices Hit Micron's Profit, Revenue
Computex: Micron Announces New High-Capacity, 16nm Triple-Level-Cell NAND
Toshiba Develops STT-MRAM Circuit For High-performance Processors
Micron, Seagate Announce Alliance on Solid-state Drives
Micron and ASTAR Data Storage Institute Renew Research Collaboration On STT-MRAM
Micron Introduces Embedded Multichip Package (MCP) Portfolio, Automotive Storage Solutions
Micron, Wave Systems, Lenovo and American Megatrends To Create New Standard to Tackle Pre-boot Threats Within the Supply Chain
Globalfoundries Invests In MRAM Maker Everspin

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2015 - All rights reserved -
Privacy policy - Contact Us .