Sunday, May 01, 2016
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
You Can No Longer Use Google In Cortana searches
HP Releases New Chromebook for Home and Office
AMD and Nantong Fujitsu Microelectronics Close on Semiconductor Assembly and Test Joint Venture
Google's Pichai Sees the End of Computers
Amazon Reports Strong Quarter
Sony Reports Loss But PlayStation Keeps Performing Well
Japan Display Showcase The Latest In Display Technologies In SID DISPLAY WEEK 2016
Strong Galaxy S7 Sales Keep Samsung's Profit High
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > PC Parts > Micron ...
Last 7 Days News : SU MO TU WE TH FR SA All News

Thursday, November 03, 2011
Micron And A*STAR Data Storage Institute to Develop Spin Transfer Torque MRAM


Micron Technology and Singapore's A*STAR Data Storage Institute (DSI) will collaborate on the development of spin transfer torque magnetic random access memory (STT-MRAM), a promising alternative non-volatile memory technology for next-generation storage.

Current commercial solid state drives (SSDs) use NAND Flash memory, a type of non-volatile memory, to store data. Demand for these types of drives has been increasing rapidly. SSDs, unlike hard disk drives (HDDs), contain no moving parts and are less susceptible to physical shock and vibration than HDDs. SSDs are also capable of retaining their memory without power and are very durable. However, as the memory industry continues to scale NAND Flash memory, it sees issues such as limited endurance and high write power. Therefore, the industry is currently researching alternative non-volatile memory solutions such as STT-MRAM. STT-MRAM also has potential to address technology scaling roadmap challenges of volatile memory such as Dynamic RAM (DRAM) and hence can enhance the performance for many volatile memory applications as well.

As part of the collaboration, Micron and DSI will invest in joint research to develop high-density STT-MRAM devices during the next three years. Researchers from both Micron and DSI will work together to develop high-density STT-MRAM devices.


Previous
Next
Samsung Exits RealD 3D Technology Deal        All News        HP Introduces Slate Tablet PC for Business
New AMD CEO To Cut Company's Workforce     PC Parts News      HP Introduces Slate Tablet PC for Business

Get RSS feed Easy Print E-Mail this Message

Related News
Everspin Releases Highest Density MRAM Products
Micron Unveils New NVMe PCIe SSDs, New Flash-storage Solutions For Open Source Data Centers
Everspin Spin Torque MRAM Showcased As A Storage Class Memory at the OpenPOWER Summit
Micron Swings to Loss
Samsung To Start Mass-Producing 18nm DRAM
Micron Outlines Tts First 3D NAND Products
Micron Outlines GDDR5X Plans
768 Gbit Micron 3D NAND Is Faster Than Samsung’s 256Gb V-NAND: ISSCC
Toshiba Develops STT-MRAM Magnetic Cache Memory, Wireless Receiver For Bluetooth Low Energy
Micron Envisions To Deliver 32GB SSDs
18nm DRAM Coming Next Year
Micron To License 1x and 1y DRAM Technologies to Nanya

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2016 - All rights reserved -
Privacy policy - Contact Us .