Saturday, June 25, 2016
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
China to Regulate Search Results Ads
HTC Apologizes For Poor Results, Pins Hopes On VR
MediaTek To Invest $6.15 billion on 5G Communication Technologies
EU, United States Strengthen Data Transfer Pact
BitTorrent Now Music And Video App Launched
Qualcomm Files Complaint Against Meizu
3-D pens And Moldable Earbuds Appear At CE Week Gadget Show
HP Recalls Batteries for HP and Compaq Notebook Computers Due to Fire and Burn Hazards
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > General Computing > Spansio...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, May 23, 2012
Spansion Unveils SLC NAND Flash Family and Future Roadmap


Spansion today announced it has started sampling its first family of single-level cell (SLC) Spansion NAND products using 4x nm floating-gate technology, targeted specifically for the embedded market.

Spansion SLC NAND will be offered in densities from 1 Gb to 8 Gb in 3.0V and 1.8V families that feature high performance, extended temperature range, long-term product support and reliability demands, such as 1-bit error correction code (ECC). Additionally, Spansion also unveiled its SLC NAND product roadmap through 2017.

Spansion SLC NAND products complement the company's broad parallel and serial NOR Flash memory portfolio. When designs require high-performance code execution and data storage, designers can select Spansion parallel or serial NOR Flash memory. Data storage needs can be addressed with new Spansion SLC NAND Flash solutions.

Spansion's five-year technology roadmap includes 1 Gb ? 8 Gb SLC NAND solutions on 4x nm technology today, 3x nm technology by end of 2012 and 2x nm in 2014.

Key Facts of the Spansion SLC NAND family:

- 3.0 Volt 1 Gb, 2 Gb and 4 Gb monolithic solutions are sampling now
- 1.8 Volt 1 Gb, 2 Gb and 4 Gb monolithic solutions will begin sampling at the end of 2012
- 8 Gb solutions will sample in the second half of 2012
- 4x nm floating-gate process technology
- Industrial temperature range (-40C to +85C)
- 100,000 cycle endurance with recommended 1-bit ECC
- SLC NAND performance with 25µs random access, 25 ns sequential access, and up to 200 µs programming
- Industry-standard 48-pin TSOP package via Spansion's Universal Footprint
- Industry-standard NAND signal interface and command set
- Complimentary Spansion FFS -- customized software drivers and Flash file system software


Previous
Next
Sony Ends Panel Joint Venture With Sharp        All News        Google Didn't Infringe on Oracle Java Patents
Sony Ends Panel Joint Venture With Sharp     General Computing News      Google Didn't Infringe on Oracle Java Patents

Get RSS feed Easy Print E-Mail this Message

Related News
China To Invest In 3D NAND Flash Plant
Samsung Showcases New BGA, Enterprise And Consumer SSDs
3D NAND-Flash Memory Makers Invest n New Facilities
SK Hynix Starts Mass Production Of 3D NAND Memory
Micron Outlines Tts First 3D NAND Products
768 Gbit Micron 3D NAND Is Faster Than Samsung’s 256Gb V-NAND: ISSCC
3D NAND Flash Memory Market is Heating Up
Micron Envisions To Deliver 32GB SSDs
Imec Advances Drive Current in Vertical 3D NAND Memory Devices
SK Hynix To Produce V-NAND In 2016
New Samsung 950 PRO SSD Reads At 2500MBps
Samsung Rolls Out Line-up of V-NAND SSDs For Data Centers

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2016 - All rights reserved -
Privacy policy - Contact Us .