Saturday, February 28, 2015
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
New Draft Bill Focuses On Consumer Data Privacy
Uber Says Breach Affected 50K Drivers
Google Showcases Future Silicon Valley Headquarters
Lenovo Offers Free McAfee LiveSafe Following Superfish Security Concerns
Yahoo Gains Search Share
Twitter To Offer More User Safety Features
Google to Start Ranking Mobile-friendly Sites Higher
Qualcomm Extends LTE to Unlicensed Spectrum to Enhance Mobile Experiences
Active Discussions
Need serious help!!!!
burning
nvidia 6200 review
Hello
Burning Multimedia in track 0
I'm lazy. Please help.
sanyo e6 camera
need help on some cd burning...
 Home > News > PC Parts > New TDK...
Last 7 Days News : SU MO TU WE TH FR SA All News

Tuesday, November 06, 2012
New TDK GBDriver RS4 Series Controller Supports Up To 1TB SSDs


TDK has developed the GBDriver RS4 series of NAND type flash memory controllers, which support the 3 Gbps serial ATA interface.

Available in January 2013, the GBDriver RS4 has an effective access speed of 180 MB/sec and is compatible with the latest 1xnm generation and 2xnm generation 16 kB/page SLC (single level cell) and MLC (multi level cell) NAND type flash memory, along with 8 kB/page and 4 kB/page structures. This means that TDK's customers will be able to select the optimal flash memory for their applications, providing the flexibility to configure high-speed SATA storage with a capacity ranging from 512 MB to 1 TB.

The controller is also supporting a read retry function to ensure data reliability when using the latest MLC type NAND flash memory. Together with the auto-recovery, data randomizer, and auto-refresh functions of the existing GBDriver series, this design accommodates also future developments in the flash memory format. Data reliability is enhanced by the GBDriver power interruption tolerance algorithm. For all those requiring an even higher level of data reliability, the Enhanced ECC function makes it possible to expand ECC to 71 bits per 512 byte block.

TDK's static wear leveling algorithm averages the write and erase process over all blocks of the memory area, improving the lifespan of installed flash memory. SMART (Self-Monitoring & Analysis Reporting Technology) provides information about the number of times that memory blocks have been erased (programmed), which facilitates quantitative lifespan management of flash storage.

Data security has also been enhanced. In addition to ATA standard security functions, AES 128-bit encryption is also available. This makes it possible to store data in the NAND type flash memory in encrypted form, to guard against the risk of data leaks and tampering.

TDK will start releasing a number of NAND modules (SSDs and other products) incorporating the new GBDriver RS4 from April 2013.


Previous
Next
Samsung For Enterprise (SAFE) Program Debuts In Europe        All News        Samsung Highlights Its Latest 20nm DDR3 And SSDs Solutions
LaCie To SHip Plug-and-play CloudBox NAS Server     PC Parts News      Samsung Highlights Its Latest 20nm DDR3 And SSDs Solutions

Get RSS feed Easy Print E-Mail this Message

Related News
Intel Releases New 20nm SSDs For Data Centers
Pioneer Releases Solid-state Drive
Mushkin STRIKER Line of Solid State Drives Debut at CES 2015
Toshiba Launches 3TB 2.5-inch HDD, Showcases First PCIe Single Package SSD
Samsung Now Mass Producing An Ultra-fast PCIe SSD for Notebooks
Plextor Unveils New M7e PCIe SSD At CES
HyperX Launches High-Performance PCIe SSD
Patriot Launches New Ignite SSD
Corsair Releases Neutron Series XT SSDs, HXi Series Power Supply Line and New Flash Drives at CES 2015
Crucial Unveils New SSDs And DDR4 Memory Modules At CES
CES: SanDisk Introduces New Affordable SSDs, USB Flash Drive for Android Devices
Samsung Releases New 3-bit V-NAND 850 EVO SSD

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2015 - All rights reserved -
Privacy policy - Contact Us .