Wednesday, March 29, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Windows 10 Creators Update Coming April 11
Samsung Galaxy S8 and S8+ Are Official, Along With Bixby And New Gear 360
Razer Blade Pro IS The First THX Certified Gaming Laptop
Lenovo Makes Pro Virtual Reality Accessible With the ThinkStation P320
Intel Details 10, 22nm Processes, Proposes Transistor-density Metric
U.S. House Voted Against Broadband Privacy Rules
SK Hynix Offers More Than $9 billion for Toshiba Chip Unit: report
Toshiba's Nuclear Unit Westinghouse Files for Bankruptcy
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > General Computing > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Thursday, March 27, 2014
Samsung To Start 3D V-NAND Production In New China-based Factory


Samsung Electronics will start operations in a new semiconductor factory in Xian, China, in May.

The factory is Samsung's first semiconductor manufacturing line based in China, and the company's second overseas factory after the one in Austin, Texas, U.S.

The tech giant pans to invest US$7 billion over five years, including the initial investment amount of US$2.3 billion in the factory, making it the biggest investment for the company into China in its history.

The factory will manufacture 3D V-NAND technology, with the initial production to be 70,000 sheets a month, using 300mm wafers.

Samsung's three-dimensional (3D) Vertical NAND (V-NAND) flash memory will be used for a wide range of consumer electronics and enterprise applications, including embedded NAND storage and solid state drives (SSDs). It offers a 128 gigabit (Gb) density in a single chip, utilizing the company's proprietary vertical cell structure based on 3D Charge Trap Flash (CTF) technology and vertical interconnect process technology to link the 3D cell array. By applying both of these technologies, Samsung's 3D V-NAND is able to provide over twice the scaling of 20nm-class planar NAND flash.

Samsung is also constructing a NAND flash post-step line that is to be completed at the end of the year. It is located close to its Xian factory, and the line?s initial investment is about US$500 million.




Previous
Next
PC, Tablet, Ultramobile and Mobile Phone Shipments to Grow 6.9 Percent This Year        All News        Samsung May Penalize SK Telecom For Early Galaxy S5 Sales
Government Requests For User Information Up 120 Percent Over Four Years: Google     General Computing News      AOL Unveils The ONE Ad Platform

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung Galaxy S8 and S8+ Are Official, Along With Bixby And New Gear 360
Samsung To Sell Refurbished Galaxy Note 7s
Samsung Backs Away From Restructuring Plan, Gears Up For Galaxy S8 Release
Samsung Plans To Release New Curved TVs
Samsung Adds 4G LTE Capability to Gear S3 Classic
Samsung and eSilicon Taped Out First 14nm Network Processor
Samsung Display Is Ramping Up Production To OLEDs For Tablets
Qualcomm Forced Samsung To Use Exynos SoCs Only In Galaxy Phones
Samsung Galaxy Tab S3 To Retail For $600
Samsung's S8 to Support Facial Recognition for Payments, 1K Fps Shooter
Samsung On Track For 10nm FinFET Process Technology Production Ramp-up
Samsung SDI Showcases Powerful ESS Products At Energy Storage Europe

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .