Friday, August 29, 2014
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Samsung Partners with Nike On Running App
Samsung Applied for Samsung Quantum Dot TV Trademark
New iPhones Expected at Sept. 9 Event
Google Tests Drones For Delivery Of Goods
UMC To Partner With Fujitsu On Chip Production
Samsung, LG Introduce New Smartwatches
Sharp, Pioneer Dissolve Their Capital Alliance
Nero 2015 is Coming At IFA
Active Discussions
help questions structure DVDR
Made video, won't play back easily
Questions durability monitor LCD
Questions fungus CD/DVD Media, Some expert engineer in optical media can help me?
CD, DVD and Blu-ray burning for Android in development
IBM supercharges Power servers with graphics chips
Werner Vogels: four cloud computing trends for 2014
Video editing software.
 Home > News > General Computing > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Thursday, March 27, 2014
Samsung To Start 3D V-NAND Production In New China-based Factory


Samsung Electronics will start operations in a new semiconductor factory in Xian, China, in May.

The factory is Samsung's first semiconductor manufacturing line based in China, and the company's second overseas factory after the one in Austin, Texas, U.S.

The tech giant pans to invest US$7 billion over five years, including the initial investment amount of US$2.3 billion in the factory, making it the biggest investment for the company into China in its history.

The factory will manufacture 3D V-NAND technology, with the initial production to be 70,000 sheets a month, using 300mm wafers.

Samsung's three-dimensional (3D) Vertical NAND (V-NAND) flash memory will be used for a wide range of consumer electronics and enterprise applications, including embedded NAND storage and solid state drives (SSDs). It offers a 128 gigabit (Gb) density in a single chip, utilizing the company's proprietary vertical cell structure based on 3D Charge Trap Flash (CTF) technology and vertical interconnect process technology to link the 3D cell array. By applying both of these technologies, Samsung's 3D V-NAND is able to provide over twice the scaling of 20nm-class planar NAND flash.

Samsung is also constructing a NAND flash post-step line that is to be completed at the end of the year. It is located close to its Xian factory, and the line?s initial investment is about US$500 million.




Previous
Next
PC, Tablet, Ultramobile and Mobile Phone Shipments to Grow 6.9 Percent This Year        All News        Samsung May Penalize SK Telecom For Early Galaxy S5 Sales
Government Requests For User Information Up 120 Percent Over Four Years: Google     General Computing News      AOL Unveils The ONE Ad Platform

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung Partners with Nike On Running App
Samsung Applied for Samsung Quantum Dot TV Trademark
Samsung, LG Introduce New Smartwatches
Samsung Starts Mass Production Of First 3D TSV DDR4 Modules
Samsung To Unveil Virtual Reality Headset, Bendable TVs
Samsung To Unveil New Smart TV Content at IFA 2014
Samsung Delivers Slim Level Box mini Wireless Speaker
Samsung, Microsoft Want To End Android Patent Dispute Soon
Galaxy Note 4 May Come in Two Versions
Samsung Buys Home-automation Company SmartThings
Samsung Exynos 5430 Is The Company's First 20nm SoC
Samsung Introduces All-metal Galaxy Alpha Smartphone

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2014 - All rights reserved -
Privacy policy - Contact Us .