Thursday, September 29, 2016
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Microsoft Creation New Artificial Intelligence and Research Group
Game of Thrones Enhanced Edition Comes To iBooks
Automakers Showcase Their Electric Vehicles At 2016 Paris Motor Show
Amazon, Google, Facebook, Microsoft And IBM Establish Partnership on AI Best Practices
Panasonic Bendable, Twistable, Flexible Lithium-ion Battery Could Bring Revolution To Future Devices
Security Firm Claims Yahoo Hack Was Not State-sponsored
Toshiba, Tohoku Electric and Iwatani Start Study of World?s Largest Hydrogen Energy System
Spotify Close To But SoundCloud: report
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > General Computing > Micron ...
Last 7 Days News : SU MO TU WE TH FR SA All News

Thursday, June 05, 2014
Micron to Discuss Emerging Memories at 2014 Symposia on VLSI Technology and Circuits


Micron Technology willparticipate in the upcoming 2014 Symposia on VLSI Technology and Circuits scheduled for June 9-13 and will feature presentations on integration of silicon photonics in bulk CMOS and copper resistive random access memory (ReRAM) for storage class memory applications.

Micron has made research on the development of the first monolithic process flow integrating silicon photonics on operational bulk CMOS. The company says that silicon photonics is a "More-than-Moore's Law" pathway to enable future high-performance memory applications. This effort is part of a larger project on building a complete photonic processor-memory system that includes research teams from Massachusetts Institute of Technology (MIT), University of Colorado Boulder and University of California, Berkeley. The research was funded by the Defense Advanced Research Projects Agency.

The copper ReRAM cell for storage class memory targets hybrid memory systems that incorporate storage class memory as non-volatile cache or DRAM data backup. This is expected to bolster system efficiency and reduce costs since storage class memory promises higher density than DRAM cache and higher speed than the storage control module.

Working in its research partner Sony, Micron has developed a ReRAM cell technology that meets the storage class memory performance specifications for a 16gigabit ReRAM with 200megabyte per second write and 1gigabyte per second read speeds.




Previous
Next
Samsung and Barnes & Noble to Create Co-Branded Tablets        All News        Twitter Eyes Online Music Firm SoundCloud: report
Tizen Developer Conference Introduces New Devices, Device Profiles, Developer Tools and Internet of Things Roadmap     General Computing News      Twitter Eyes Online Music Firm SoundCloud: report

Get RSS feed Easy Print E-Mail this Message

Related News
Micron Announces QuantX Branding For 3D XPoint Memory, Releases 3D NAND flash for Mobile Devices
Micron Introduces SLC NAND Flash for IoT and Automotive
Micron To Reduce Workforce Following Slow Third Quarter Results
Micron Showcases 3D NAND-based Ballistix TX3 And Crucial MX300 SSDs at Computex
Micron Expands Singapore NAND Fab
Micron Debuts 3D NAND 1100 and 2100 SSDs
Micron Unveils New NVMe PCIe SSDs, New Flash-storage Solutions For Open Source Data Centers
Micron Swings to Loss
Samsung To Start Mass-Producing 18nm DRAM
Micron Outlines Tts First 3D NAND Products
Micron Outlines GDDR5X Plans
768 Gbit Micron 3D NAND Is Faster Than Samsung’s 256Gb V-NAND: ISSCC

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2016 - All rights reserved -
Privacy policy - Contact Us .