Micron Technology willparticipate in the upcoming 2014 Symposia on VLSI Technology and Circuits scheduled for June 9-13 and will feature presentations on integration of silicon photonics in bulk CMOS and copper resistive random access memory (ReRAM) for storage class memory applications.
Micron has made research on the development of the first monolithic process flow integrating silicon photonics on operational bulk CMOS. The company says that silicon photonics is a "More-than-Moore's Law" pathway to enable future high-performance memory applications. This effort is part of a larger project on building a complete photonic processor-memory system that includes research teams from Massachusetts Institute of Technology (MIT), University of Colorado Boulder and University of California, Berkeley. The research was funded by the Defense Advanced Research Projects Agency.
The copper ReRAM cell for storage class memory targets hybrid memory systems that incorporate storage class memory as non-volatile cache or DRAM data backup. This is expected to bolster system efficiency and reduce costs since storage class memory promises higher density than DRAM cache and higher speed than the storage control module.
Working in its research partner Sony, Micron has developed a
ReRAM cell technology that meets the storage class memory performance specifications for a 16gigabit ReRAM with 200megabyte per second write and 1gigabyte per second read speeds.