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Wednesday, May 03, 2017
Intel Launches New 3D NAND DC P4500 And DC P4600 SSDs for Data Centers


The Intel SSD DC P4500 Series is one of two new 3D NAND solid state drives for data centers announced by Intel today, along with the SSD DC P4600 Series.

The latest additions to the Intel SSD Family for Data Center have been designed for cloud storage solutions, including software defined storage and converged infrastructure. The Intel SSD DC P4500 Series has been optimized for reads. The has been designed for mixed workloads, accelerates caching and enables more workloads per server.

The Intel SSD DC P4500 Series and P4600 Series pair Intel's triple level cell (TLC) 3D NAND, a new Intel-developed controller, firmware innovations and PCIe/NVMe. Initially, the Intel SSD DC P4500 Series and P4600 Series will launch in a half-height half-length add-in card and U.2 2.5-inch form factors in 1, 2 and 4TB capacities.

Intel SSD DC P4600 Series

  • Lithography Type:3D NAND TLC
  • Sequential Read (up to): 3270 MB/s
  • Sequential Write (up to): 2100 MB/s
  • Random Read (100% Span): 694000 IOPS
  • Random Write (100% Span): 228000 IOPS
  • Latency - Read: 79 µs
  • Latency - Write: 34 µs
  • Power - Active: Sequential Avg. 20.71 W (Write), 9.88 W (Read)
  • Power - Idle: <5 W
  • Endurance Rating (Lifetime Writes): 21690 TBW
  • Mean Time Between Failures (MTBF): 2 million hours
  • Warranty: 5 yrs

Intel SSD DC P4500 Series

  • Lithography Type: 3D NAND TLC
  • Sequential Read (up to): 3290 MB/s
  • Sequential Write (up to): 1140 MB/s
  • Random Read (100% Span): 515000 IOPS
  • Random Write (100% Span): 41000 IOPS
  • Latency - Read: 80 µs
  • Latency - Write: 29 µs
  • Power - Active: Sequential Avg. 13.75 W (Write), 8.95 W (Read)
  • Power - Idle: <5 W
  • Endurance Rating (Lifetime Writes): 1790 TBW
  • Mean Time Between Failures (MTBF): 2 million hours
  • Warranty: 5 yrs

Intel is also expanding Fab 68 in Dalian, China, increasing its 3D NAND supply. In October 2015, Intel announced an investment in Fab 68 and converted the facility to produce 3D NAND.



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