Samsung Develops First 28nm Embedded Flash Memory Process

Friday, September 8, 2017

Samsung Develops First 28nm Embedded Flash Memory Process

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Samsung Electronics has developed the first 28-nano embedded flash memory process, which can be applied to Micro Controller Units (MCU) or Smart Card ICs.

Samsung's 28-nano embedded flash memory process technology allows for the integration of a semiconductor such as an MCU and flash memory into a single chip. According to Samsung, the new process offers a 50% improvement in the performance of a flash memory embedded in to a chip die, while the memory's power consumption will be lowered by 20%, compared to the previous 45-nano embedded flash memory process technology. In addition, the size of the flash memory inside the chip is reduced by 25%, for a specific capacity.

The development could help Samsung attract more foundry customers related to automotive and IoT device markets.

NXP, which is the world's top automotive semiconductor manufacturer, has already decided to produce MCUs using Samsung's 28-nano process and integrate flash memory and MRAMs into them.