Samsung Electronics today announced acquisition of Grandis Inc., a
leader in spin transfer torque random access memory (STT-RAM).
Grandis will be merged into those Samsung's R&D operations that are
focused on developing the next evolution of memory, where new
semiconductor materials and structures are reviewed for their
long-term commercial value.
With its expertise in next-generation memory solutions and strong
technical capabilities, Grandis will contribute to Samsung's
continued development of memory semiconductor technologies and
become a key part of the company's global R&D network.
Effective late July, the acquisition includes the full scope of
technology, assets and human resources under Grandis, Inc. Further
details of the transaction were not disclosed.
Grandis' non-volatile memory technology is a future contender to
DRAM and NAND flash memory. The technology requires less power and
has higher performance than DRAM and NAND.
However, to date, it has been too expensive to mass produce.
Based in Silicon Valley, California, Grandis has about 25 employees
and was founded in 2002.