Mitsubishi Electric has developed a prototype gallium nitride high-electron mobility transistor (GaN HEMT) amplifier with a leading 100W output power for Ku-band (14GHz) satellite communications.
The high-output GaN HEMT amplifier features a downsized configuration and a low-loss circuit. Output power is doubled compared to Mitsubishi Electric's existing GaN HEMT amplifier and quadrupled compared to the company's Electric's GaAs amplifier. The new amplifier's ability to perform the tasks of four conventional units represents an important contribution to downsize transmitters to one sixth the size of a GaAs amplifier.
Gallium arsenide (GaAs) amplifiers have been used commonly for satellite communication transmitters, but gallium nitride (GaN) amplifiers have become increasingly popular recently because GaN transistors can handle very high voltage.
High-power output is required for radio transmission from terrestrial stations to satellites in geostationary orbit 36,000 km above sea level.