SK Hynix has introduced DDR3L-RS (Reduced Standby) DRAM for mobile solutions using its 20nm class technology.
By using 20nm class technology and efficiently managing standby current, this DDR3L-RS product reduces 70% of standby power compared to existing DDR3L DRAM while it maintains DDR3L performance. DDR3L DRAM which has recently gone mainstream works at 1.35V, while DDR3 DRAM does at 1.5V.
This product is available in both chip and module types. Chips for on-board use enable thinner devices to implement various densities with 2Gb (gigabit), 4Gb and 8Gb. SO-DIMMs (Small Outline Dual Inline Memory Module) are also provided with densities of 2GB (gigabyte), 4GB and 8GB.
The company claims the new product is available at price competitive to LPDDR3, while it significantly reduces standby current than existing DDR3L.
SK hynix said it plans to strengthen its footing by targeting the growing ultrabook and tablet computer market with the highly-portable and energy-efficient DDR3L-RS DRAM.
"With the release of the new DDR3L-RS DRAM, we are now able to provide price competitive and low power products to the customers and these products will open a new area of memory semiconductor as one of the best memory solutions for the low to mid-end market," said Mr. Ji Bum Kim, Head of Worldwide Marketing & Sales Division of SK Hynix.
According to market research firm iSuppli, the portion of the ultrathin shipments in the laptop market is expected to be 11% in 2012 and will eventually be expanded up to 39% in 2014. In 2015, it will jump to the half of the lap top market with 52% share.