Toshiba Develops Highest Density Non-volatile RAM
Toshiba today announced the prototype of a new FeRAM ?Ferroelectric Random Access Memory? that redefines industry benchmarks for density and operating speed. The new chip...
Fujitsu Starts Volume Production of 2 Mbit FRAM Chips
Fujitsu today announced the availability of its 2 Megabit (Mbit) FRAM memory chips, the largest capacity FRAM in volume production in the world. The two...
Epson FeRAM Memory Promises Ten Times More Rewriting Cycles Than Conventional Products
Seiko Epson Corporation has succeeded in developing ferroelectric random access memory (FeRAM) a next-generation type of semiconductor memory promising a number of rewriting...
Fujitsu Developed New Material for 65nm 256Mbit FeRAM
Fujitsu Microelectronics America announced that the Tokyo Institute of Technology, Fujitsu Laboratories, and Fujitsu Limited have jointly developed a new material for a new generation...
Toshiba Develops High Density FeRAM, MRAM Memory
Toshiba today announced a newly developed FeRAM?a Ferroelectric Random Access Memory?that redefines industry benchmarks for density and operating speed. The new chip takes FeRAM storage...
