Intel and Micron Receive Flash Memory Technology Award
Intel and Micron Technology, Inc. received the Most Innovative
Flash Memory Technology award Aug. 10 at the 2011 Flash Memory
Summit for the companies' industry-leading 20 nanometer (nm) NAND
Flash memory process technology.
The 20nm 8 gigabyte (GB) NAND device from Intel and Micron delivers
the highest capacity in the smallest form factor. Manufactured by IM
Flash Technologies, the NAND flash joint venture from Intel and
Micron, the new device is a breakthrough in NAND process and
technology design.
Shrinking NAND lithography to this technology node is the most cost-effective method for increasing NAND output to date, providing approximately 50 percent more gigabyte capacity than current technology.
Additionally, the new 20nm 8GB device measures just 118mm2 and enables a 30 to 40 percent reduction in board space (depending on package type) compared to existing 25nm 8GB NAND devices. A reduction in the flash storage layout provides greater system level efficiency as it enables tablet and smartphone manufacturers to use the extra space for end-product improvements such as a bigger battery, larger screen or adding another chip to handle new features.
Shrinking NAND lithography to this technology node is the most cost-effective method for increasing NAND output to date, providing approximately 50 percent more gigabyte capacity than current technology.
Additionally, the new 20nm 8GB device measures just 118mm2 and enables a 30 to 40 percent reduction in board space (depending on package type) compared to existing 25nm 8GB NAND devices. A reduction in the flash storage layout provides greater system level efficiency as it enables tablet and smartphone manufacturers to use the extra space for end-product improvements such as a bigger battery, larger screen or adding another chip to handle new features.
