SK Hynix Develops First 128GB Module Built On 8Gb DDR4
SK Hynix on Monday announced that it has developed the world's first highest density of 128GB module based on 8Gb DDR4 using its 20nm class technology.
This module has double density compared to existing 64GB by taking advantage of TSV (Through Silicon Via) technology. TSV is a method for passing electrical connections vertically through a silicon die and is used to create three-dimensionally stacked integrated circuits.
The new memory new product works at 2133Mbps and with a 64-bit I/O it processes up to 17GB of data per second. It also runs at ultra low-voltage of 1.2V which does at lower voltage than 1.35V of existing DDR3.
The company plans to start mass production of 128GB and 64GB modules built on 8Gb DDR4 in the first half of next year.
The new interface DDR4 is expected to be certified by in this year and is anticipated to be commercialized regularly from 2015. Also, it is expected to be the main standard in the industry from 2016.
Intel is expected to add support for DDR4 memory to its high-end computers in the third quarter.
The new memory new product works at 2133Mbps and with a 64-bit I/O it processes up to 17GB of data per second. It also runs at ultra low-voltage of 1.2V which does at lower voltage than 1.35V of existing DDR3.
The company plans to start mass production of 128GB and 64GB modules built on 8Gb DDR4 in the first half of next year.
The new interface DDR4 is expected to be certified by in this year and is anticipated to be commercialized regularly from 2015. Also, it is expected to be the main standard in the industry from 2016.
Intel is expected to add support for DDR4 memory to its high-end computers in the third quarter.
