Toshiba Announces Enterprise Read Intensive SSD for Servers
Toshiba today unveiled the HK3R enterprise solid
state drive, a 2.5-inch, 6Gb/s SATA eSSD integrated with
Toshiba 19nm NAND flash.
The HK3R eSSD is optimized for read-intensive
applications such as read-caching, error logging, boot, and
low-duty storage applications requiring power-loss-protection
and end-to-end data protection features.
It incorporates Toshiba proprietary QSBC (Quadruple Swing-By Code) error-correction technology and it is available in capacities up to 480 GB. According to Toshiba, the HK3R series drives achieve sequential read speeds of 500MiB/s and Random Read speeds of 75,000 IOPS. The 240GB and 480GB drives achieve sequential write speeds of 400MiB/s and random write speeds up to 12,000 IOPS, while the 120GB drive reaches sequential write speeds of 280MiB/s and random write speeds of 10,000 IOPS.
The drive also supports one full drive write per day with a one hundred percent random data, aligned 4KiB workload. Additionally, the eSSD carries a 5-year limited warranty.
Toshiba will begin sampling the HK3R 120GB, 240 GB and 480GB in December 2013.
It incorporates Toshiba proprietary QSBC (Quadruple Swing-By Code) error-correction technology and it is available in capacities up to 480 GB. According to Toshiba, the HK3R series drives achieve sequential read speeds of 500MiB/s and Random Read speeds of 75,000 IOPS. The 240GB and 480GB drives achieve sequential write speeds of 400MiB/s and random write speeds up to 12,000 IOPS, while the 120GB drive reaches sequential write speeds of 280MiB/s and random write speeds of 10,000 IOPS.
The drive also supports one full drive write per day with a one hundred percent random data, aligned 4KiB workload. Additionally, the eSSD carries a 5-year limited warranty.
Toshiba will begin sampling the HK3R 120GB, 240 GB and 480GB in December 2013.
| Model | THNSNJ480PCS3 | THNSNJ240PCS3 | THNSNJ120PCS3 |
|---|---|---|---|
| Basic specification | |||
| Interface | SATA-3.0 (6.0Gbit/s,
3.0Gbit/s, 1.5Gbit/s) |
||
| NAND technology | 19nm MLC |
||
| Capacity | 480GB |
240GB |
120GB |
| Logical data block length | 512Byte
only |
||
| Sustained 64KiB Sequential Read | 500 MiB/s |
||
| Sustained 64KiB Sequential Write | 400 MiB/s |
280 MiB/s |
|
| Sustained 4KiB Random Read | 75,000
IOPS |
||
| Sustained 4kiB Random Write | 12,000
IOPS |
10,000 IOPS |
|
| Reliability | |||
| MTTF | 2,000,000
hours |
||
| Operating Condition | 24 hours/day,
7days/week |
||
| Service life | 5 years |
||
| TBW *1 | 880 TB |
440 TB |
220 TB |
| Power requirment | |||
| Regulation | 5 V ± 5% |
||
| Power consumption | |||
| Power consumption Ready (Idle A) |
1.0 W
Typ. |
||
| Power consumption efficiency | 75,000
IOPS/W |
||
| Dimension | |||
| Height | 7.0 mm +0, -0.5 mm |
||
| Width | 69.85 ± 0.25
mm |
||
| Length | 100.45 mm
Max. |
||
| Weight | 60 g Max. |
||
| Temperature | |||
| Operating | 0 to 55°C |
||
| Non-Operating | -40 to
70°C |
||
| Vibration/Shock | |||
| Vibration (Operating) | 21.27 m/s2
{2.17Grms} (5 to 800Hz) |
||
| Vibration (Non-operating) | 159.74 m/s2
{16.3Grms} (20 to 2000Hz) |
||
| Shock (Operating) | 9,800 m/s2
{1,000G} / 0.5 ms duration |
||
| Shock (Non-operating) | 9,800 m/s2
{1,000G} / 0.5 ms duration |
||
| Security | |||
| Self Encryption Drive | NO |
||
| Sanitize Instant Erase | Option |
||
| Others | |||
| Power Loss Protection | YES |
||
