Saturday, April 25, 2015
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
LG Display Leads The OLED Market
China Telecom To Sell Phones With Alibaba
SK Hynix To Start Production Of 36-Layer 3D NAND Flash Chips
Apple Watch Available In Select Stores
Comcast Abandons Time Warner Cable Acquisition Bid
Luxottica To Release Hi-tech Glasses Powered By Intel
Toshiba Starts Mass Production of 13 Megapixel CMOS Image Sensor
ARM Details New Cortex-A72 Processor
Active Discussions
menu making
roxio issues with xp pro
How to burn a backup copy of The Frozen Throne
Help make DVDInfoPro better with dvdinfomantis!!!
Question about nero
Copied dvd's say blank in computer only
Optiarc AD-7260S review
cdrw trouble
 Home > News > General Computing > Phase C...
Last 7 Days News : SU MO TU WE TH FR SA All News

Thursday, February 07, 2008
Phase Change Technology to Challenge Flash Memory


Intel and STMicroelectronics reached a key industry milestone today as they began shipping prototype samples of a future product using a new memory technology called Phase Change Memory (PCM).

The prototypes are the first functional silicon to be delivered to customers for evaluation, bringing the technology one step closer to adoption.

The memory device, codenamed "Alverstone" uses PCM, a new memory technology providing very fast read and write speeds at lower power than conventional flash, and allows for bit alterability normally seen in RAM.

"This is the most significant non-volatile memory advancement in 40 years," said Ed Doller, chief technology officer-designate of Numonyx, the new name for the pending STMicroelectronics and Intel flash memory company. "There have been plenty of attempts to find and develop new non-volatile memory technologies, yet of all the concepts, PCM provides the most compelling solution ? and Intel and STMicroelectronics are delivering PCM into the hands of customers today. This is an important milestone for the industry and for our companies."

In related news, Intel and STMicroelectronics technologists presented a research paper this week at the International Solid States Circuits Conference (ISSCC) describing yet another breakthrough in PCM technology. Together, the companies created the world?s first demonstrable high-density, multi-level cell (MLC) large memory device using PCM technology. The move from single bit per cell to MLC also brings significantly higher density at a lower cost per Mbyte making the combination of MLC and PCM a powerful development.

In 2003, Intel and STMicroelectronics formed a joint development program (JDP) to focus on Phase Change Memory development. Previously the JDP demonstrated 8Mb memory arrays on 180nm at the 2004 VLSI conference and first disclosed the Alverstone 90nm 128Mbit memory device at the 2006 VLSI Symposium. Alverstone and future JDP products will become part of Numonyx, a new independent semiconductor company created through an agreement between STMicroelectronics, Intel and Francisco Partners signed in May 2007. The new company's strategic focus will be on supplying complete memory solutions for a variety of consumer and industrial devices, including cellular phones, MP3 players, digital cameras, computers and other high-tech equipment. The companies are scheduled to close the transaction in the first quarter of 2008.

In 2007, the combined memory market for DRAM, flash, and other memory products such as EEPROM was US$61 billion, according to the industry research firm Web-Feet Research, Inc. Memory technology cost declines have traditionally been driven at the rate of "Moore?s Law," where density doubles every 18 months with each lithography shrink. As RAM and flash technologies run into scaling limitations over the next decade, PCM costs will decline at a faster rate. The advent of multi-level-cell PCM will further accelerate the cost per bit crossover of PCM technology relative to today's technologies. Finally, by combining the bit-alterability of DRAM, the non-volatility of flash, the fast reads of NOR and the fast writes of NAND, PCM has the ability to address the entire memory market and be a key driver for future growth over the next decade.

Alverstone is a 128Mb device built on 90nm and is intended to allow memory customers to evaluate PCM features, allowing cellular and embedded customers to learn more about PCM and how it can be incorporated into their future system designs.


Previous
Next
Toshiba to Develop 16-Gigabit NAND Flash Memory with 43nm Process Technology        All News        How to Copy a Blu-ray Disc to the Hard Drive
Toshiba to Develop 16-Gigabit NAND Flash Memory with 43nm Process Technology     General Computing News      Microsoft Showcases Web Advertising Prototypes

Get RSS feed Easy Print E-Mail this Message

Related News
Luxottica To Release Hi-tech Glasses Powered By Intel
Intel's Pocket-sized Computer Now Available
Intel Reports Lower PC Sales And Higher Data Center Revenues For Q1 2015
Intel's MICA Now Delivers Fashion Tips, Styling Tricks and Weekly Horoscopes
Intel Demos Realsense Camera, Atom x3 Processor And Braswell SoCs at IDF
Intel Unveils Its Highest Performing Client SSD
Intel Releases New Braswell SoCs
Intel in Talks to buy Altera: report
Intel Lowers First-quarter Revenue Forecast Amid Slow PC Demand
Intel Introduces New Xeon Processor D-1500 Product Family
Intel Outlines 2015 Gaming News at GDC
MWC: Intel Launches New Mobile SoCs, LTE Solution

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2015 - All rights reserved -
Privacy policy - Contact Us .