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Thursday, October 31, 2013
Toshiba Launches New 19nm Embedded NAND Flash Memory Modules


Toshiba launches a new embedded NAND flash memory modules integrating NAND chips fabricated with 19nm second generation process technology.

Toshiba's new 32-gigabyte (GB) embedded device integrates four 64Gbit (equal to 8GB) NAND chips fabricated with Toshiba's 19nm second generation process technology and a dedicated controller into a small package measuring 11.5 x 13 x 1.0mm. It is compliant with JEDEC e・MMCTM Version 5.0, published by JEDEC in September, and achieves a high read/write performance by applying the new HS400 high speed interface standard.

The JEDEC e•MMCTM V5.0 compliant interface handles essential functions, including writing block management, error correction and driver software.

Toshiba will bring the NAND chips to a line-up of single-package embedded NAND flash memories in densities from 4GB to 128GB. All will integrate a controller to manage basic control functions for NAND applications.

Product Name

THGBMBG8D4KBAIR

THGBMBG7D2KBAIL

Interface

JEDEC e•MMCV5.0 standard

HS-MMC interface

Capacity

32GB

16GB

Power Supply Voltage

2.7~3.6V  (Memory core)

1.7V~1.95V / 2.7V~3.6V  (Interface)

Bus Width

x1 / x4 / x8

Write Speed

90MB per sec.(Sequential/HS400 Mode)

50MB per sec.(Sequential/HS400 Mode)

Read Speed

270MB per sec.(Sequential/HS400 Mode)

270MB per sec.(Sequential/HS400 Mode)

Temperature Range

-25degrees to +85degees Celsius

Package

153Ball FBGA

11.5x13x1.0mm

153Ball FBGA

11.5x13x0.8mm





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