Friday, October 31, 2014
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Sharp To Produce New Backlight-free LCD Panel For Wearables
New Cameras Boost GoPro's Quarterly Profit
Panasonic AX800 4K ULTRA HD TVs Update Adds Compatibility With Netflix 4K Streaming
YouTube Now Supports 60fps Videos
Samsung Brings Gear S to U.S. Next Week
Corsair Introduces Sabre RGB Mice For Gamers
Ubisoft's Assassin's Creed Unity Included with Purchase of Samsung UD590 Monitor or 850 PRO Series SSD
Apple's Tim Cook Declares His Sexual Orientation
Active Discussions
Copied dvd's say blank in computer only
Made video, won't play back easily
New Features In Firefox 33
updated tests for dvd and cd burners
How to generate lots of different CDs quickly
Yamaha CRW-F1UX
help questions structure DVDR
Questions durability monitor LCD
 Home > News > PC Parts > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Tuesday, February 18, 2014
Samsung Announces High-endurance 128Gb V-NAND Flash Memory For Enerprise SSDs


Samsung Electronics announced the development of a "Vertical NAND (V-NAND)" 3D NAND flash memory that endures 35,000 write/erase cycles as an enterprise SSD.

Speaking earlier this month at the International Solid-State Circuits Conference (ISSCC) 2014, Samsung's researchers described the new V-NAND memory, which is an MLC (multi-level cell) product using 24 memory cell layers and has a capacity of 128 Gbits per chip. The chip are is 133mm2 and its bit density is 0.96 Gbits/mm2, which Samsung claims is the highest in the industry.



However, the manufacturing cost of the V-NAND remains higher than the latest planar NAND, requiring new capital investments. Samsung says that the next generations of V-NAND will feature with more memory cell layers, making its cost comparable to planar NAND in cost. The company plans to release 1-Tbit V-NAND sometime in 2017.

The company targets the latest technology at high-performance applications such as enterprise SSDs. Whan applied to an enterprise SSD, the new V-NAND realizes a write/erase endurance of 35,000 cycles with a write throughput of 36 Mbytes per second, according to Samsung. For embedded applications, it will realize a write/erase endurance of 3,000 cycles with a write throughput of 50 Mbytes per second.

At ISSCC 2014, Micron Technology also announced a 16nm 128Gbit NAND flash memory based on the planar NAND technology. This chip was larger (173.3mm2) that Samsung's V-NAND memory.

The battle between 2D NAND and 3D NAND has just begun. The current manufacturing cost of the V-NAND is higher than that of the latest planar NAND. On the other hand, it is not clear how further the miniaturization of planar NAND can go, as microfabrication lead to an increased in bit-error ratio and strong error correction technologies would be required.




Previous
Next
Sony PS4 Sales Surpass 5.3 Million Units        All News        Researchers Develop Electrode That Can Be Used In Stretchable Electronic Devices
Intel Releases Xeon Processor E7 v2 Family For Big Data Analytics     PC Parts News      Spansion Debuts Breakthrough Interface and World's Fastest NOR Flash Memory

Get RSS feed Easy Print E-Mail this Message

Related News
Ubisoft's Assassin's Creed Unity Included with Purchase of Samsung UD590 Monitor or 850 PRO Series SSD
Samsung Reports Decreased Operating Profit For Third-quarter
Samsung Galaxy Note Edge Released in Korea
New Samsung Galaxy S5 'Plus' Released With Faster Processor
SK Telecom and Samsung Join Hands to Lead 5G Network Technology
New 64-bit Exynos 7 Octa Processor Supports Iris Recognition
Samsung Claims 5G Speed Record
Facebook And Samsung Executives Discuss Mobile, Content Collaborations
Samsung SDI and LG Chem Showcase Advanced Batteries
Samsung Gevelops 5 Times Faster WiFi technology
Samsung Starts Mass Production of First 3-bit 3D V-NAND
Samsung Galaxy Tab Active Now Available For Pre-order

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2014 - All rights reserved -
Privacy policy - Contact Us .