Monday, July 27, 2015
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Google Announces Changes To Google Plus
Sony HT-RT5 Sound Bar Offers Wireless Surround Sound, Easiness
Toshiba Expands Line-up of ARM Cortex -M-based Microcontrollers
Canon Cuts Outlook Following Weak Camera Sales
New User Interface Technology Converts Entire Rooms into Digital Spaces
Intel Skylake Processors To Provide Significant Graphics Boost
Apple Watch Coming To Best Buy stores
Samsung SE370 Is The First Wireless Mobile Charging Monitor
Active Discussions
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
How to burn a backup copy of The Frozen Throne
Help make DVDInfoPro better with dvdinfomantis!!!
Copied dvd's say blank in computer only
menu making
Optiarc AD-7260S review
 Home > News > PC Parts > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Friday, May 09, 2014
Samsung Has Started 3D V-NAND Production In Chinese Facility


Samsung Electronics has started operating its 3D V-NAND memory fabrication line in Xi'an China in full-scale.

Construction of the new manufacturing facility took 20 months since Samsung broke ground here in September, 2012. The total area of the facility is approximately 230,000 square meters, situated on 1.14 million square meters of land.

Samsung Vice Chairman and CEO Dr. Oh-Hyun Kwon hosted a plant inauguration event, which welcomed a large number of attendees including Chinese government dignitaries.

By commencing operations of its Xi'an fabrication line, Samsung has secured a solid memory production base in China, a market where approximately 50 percent of global NAND flash is generated from production bases operated by many IT companies here.

Samsung's three-dimensional (3D) Vertical NAND (V-NAND) flash memory will be used for a wide range of consumer electronics and enterprise applications, including embedded NAND storage and solid state drives (SSDs). It offers a 128 gigabit (Gb) density in a single chip, utilizing the company's proprietary vertical cell structure based on 3D Charge Trap Flash (CTF) technology and vertical interconnect process technology to link the 3D cell array. By applying both of these technologies, Samsung's 3D V-NAND is able to provide over twice the scaling of 20nm-class planar NAND flash.

Samsung plans to complete construction of its entire Xi'an complex, which includes an assembly facility and test line, by the end of this year.




Previous
Next
Apple To Buy Beats For $3.2 billion        All News        Nvidia Details Financial Results For First Q Fiscal 2015
Chinese Xiaomi To Enter The Tablet Market     PC Parts News      IBM Develops Ultra-fast Phase Change Memory System

Get RSS feed Easy Print E-Mail this Message

Related News
Smartphone Market Posts Year-Over-Year Growth in Q2 2015
Samsung Unveils New Data Center Solid State Drives
New Galaxy J2 Coming In S. Korea
Samsung Galaxy Tab S2 Tablet Coming Next Month
Samsung Launches The Ultra-slim Galaxy A8 in China
Samsung To Develop 11K Super-Resolution Display
Next Generation Samsung Galaxy Note To Come In August
Samsung Galaxy Grand Prime Arrives At Sprint
Samsung Announces Earnings Guidance
Samsung's s 2TB 850 PRO SSDs Are Rolling Out Globally
South Korean Display Makers To Provide Flexible Display For Next Apple Watch: analyst
Samsung 'S6 EDGE+' Trademarks Hints At New Model

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2015 - All rights reserved -
Privacy policy - Contact Us .