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Thursday, January 21, 2016
SK Hynix to Proceed With Development Of 10nm DRAM


SK Hynix will try to catch up with other players in the DRAM memory market such as Samsung, by increasing the mass production of 20-nano class DRAM first and finish the development of 10-nano class DRAM by the end of this year.

SK hynix President Park Sung-wook said the company will get over the crisis in the memory semiconductor market with new high-tech products such as 10-nano DRAMs and 48-layer 3D NAND flash chips. By strengthening its weak competence in system semiconductors, the company is planning to take the lead in the semiconductor industry, which is overshadowed by a decrease in global memory chip demand and the rise of Chinese memory chip makers.

Park said in his New Year’s message on Jan. 20, "Due to global economic uncertainties such as slow growth in memory chip demand and China’s efforts to promote its memory chip industry, the market conditions this year are tough. We will turn a crisis into an opportunity in 2016 by improving our competitiveness."

He added, "SK hynix has the strength to break through the game of chicken in the memory chip sector in the last decade."

SK hynix also aims to mass produce 48-layer 3D NAND flash chips, which are currently mass produced only by Samsung, within the year, and jump into the top class in the NAND flash chip market by beating its competitors, including Toshiba.

In addition, SK hynix will accelerate the technology development of next-generation memory chip products after system semiconductors, DRAM and NAND flash chips this year, said Park.





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