Deteriorating economic conditions and decreased demand for 200 millimeter (mm) specialty DRAM products have created additional challenges for Micron Technology, s Boise manufacturing operations. Micron...
Micron is currently sampling the industrys highest density all-in-one NAND-based multi-chip package (MCP), a solution including 16GB of multi-level cell (MLC) NAND, for high-end mobile...
Micron Technology today announced it has worked with Sun Microsystems to develop a new single-level cell (SLC) enterprise NAND technology that extends the lifespan of...
Intel and Micron today announced mass production of their jointly developed 34nm, 32 gigabit multi-level cell (MLC) NAND flash memory device. Developed and manufactured by...
Micron Technology is expanding its partnership with Nanya Technology Corporation and signing a definitive agreement to acquire Qimonda AG?s 35.6 percent ownership stake in Inotera...
In response to a challenging g The combination of declining customer demand and product oversupply in the marketplace has driven selling prices for NAND flash...
Today Intel and Micron introduced the industry's first sub-40 nanometer (nm) NAND memory device, unveiling a 34nm 32 gigabit (Gb) multi-level cell chip. This process...
Micron Technology, Inc. and Nanya Technology Corporation announced today that the two companies have signed an agreement to create MeiYa Technology Corporation, a new DRAM...
Micron today announced that it is sampling 4 gigabyte (GB) DDR3 modules, designed using 2 gigabit (Gb) components. High-density memory modules are becoming increasingly important...
Rambus said on Wednesday it won a key case in a long-running patent lawsuit. The jury rejected claims by three large memory-chip makers, Hynix Semiconductor...