Rice University’s silicon oxide technology for high-density, next-generation computer memory is one step closer to mass production, thanks to a refinement that will allow manufacturers...

Startup Crossbar emerged from stealth mode Monday to announce its version of RRAM (resistive random-access memory), a new type of memory that could be a...

SK hynix Inc., the world's second-largest memory chipmaker, said Sunday it has signed an alliance deal with IBM on the development of a next-generation Phase...

Samsung will present an 8-Gbit, 20-nm Phase Change Memory chip at the 2012 International Solid-State Circuits Conference. Samsung's memory device has been built in a...

Samsung today announced the industry's first multi-chip package (MCP) with PRAM for use in mobile handsets, beginning later this quarter. The 512 megabit Samsung PRAM...

Intel and Numonyx B.V. today announced a key breakthrough in the research of phase change memory (PCM), a new non-volatile memory technology that combines many...

Samsung today announced at the sixth annual Samsung Mobile Solutions Forum held at the Westin Taipei Hotel that is has begun producing 512-Megabit (Mb) PRAM...

Samsung Electronics will start mass-producing PRAM (Phase change RAM) in June, in an effort to in order to maintain its leadership in the memory market...

Samsung Electronics will begin mass production of 512MB PRAM (Phase change RAM) in the first half of the next year, in an effort to in...

Elpida and UMC today announced a joint development program for advanced DRAM with copper low-k backend, as well as for phase-change random access memory (PRAM)...