Breaking News

GEEKOM to Unveil World's Most Powerful AI Mini PC at IFA 2025 Dolby Unveils Dolby Vision 2 Samsung Launches All-New Sound Tower at IFA 2025 LG Display 4th-Generation OLED Panel obtains industry’s first Perfect Reproduction Verification Viltrox launches AF 56mm Ultra-large aperture F1.2 Pro E and XF (APS-C) lenses

logo

  • Share Us
    • Facebook
    • Twitter
  • Home
  • Home
  • News
  • Reviews
  • Essays
  • Forum
  • Legacy
  • About
    • Submit News

    • Contact Us
    • Privacy

    • Promotion
    • Advertise

    • RSS Feed
    • Site Map

Search form

Crossbar Demonstrates Breakthrough Resistive RRAM at IEDM 2014

Crossbar Demonstrates Breakthrough Resistive RRAM at IEDM 2014

Enterprise & IT Dec 15,2014 0

Start-up company Crossbar announced today at IEEE International Electron Devices Meeting (IEDM) a breakthrough in 3D RRAM architecture that could allow the development of a 1TB RRAM memory chips that have the size of a postage stamp. Presented by Dr. Sung Hyun Jo, Crossbar senior fellow, the presentation discussed how to overcome a common design challenge in high-density RRAM development, and described how a Field Assisted Superlinear Threshold (FAST) selector device can successfully suppress the sneak path current inherent in RRAM memory, another milestone needed to commercialize RRAM memory for high-density data applications.

Reading cells reliably in a high-density 3D matrix isn't easy due to current leakage between the closely-packed cells. That's the problem that Crossbar is saying it solved. The Field Assisted Superlinear Threshold (FAST) Selector suppresses sneak currents while it is implemented as a passive crossbar array, a relatively simple structure to fabricate.

Crossbar RRAM technology is based on filamentary nanoparticles while using simple CMOS compatible materials. Each cell is located at the crossbar junction of metal layers and it scales down to at minimum 5nm nodes. The cell is manufactured at low temperatures and is built between interconnecting metal layers.

A Crossbar cell is stackable, therefore, providing high density 3D arrays without occupying additional silicon area.

Crossbar's RRAM technology is 20 times faster than NAND flash in reads and writes, while using 1/20th the energy. The company has 3D scalability with their "1TnR" (1 Transistor driving n Resistive memory cells) technology, where a single transistor can drive hundreds of memory cells.

RRAM's lower energy requirement and 3D density will make it a natural for phones, phablets and notebooks, as well as power-constrained sensors.

The company first unveiled its RRAM technology in August 2013 and then demonstrated pre-production 1MB arrays using its "1TnR" technology for read/write operations in June 2014.

Crossbar expects some of its 3D Restive RAM (3D RRAM) products to be out in 2016 as memory in wearable devices, with high-density storage devices like solid-state drives arriving within 18 months after that.

Tags: ReRAM
Previous Post
HGST To Acquire Skyera
Next Post
WhatsApp Could Soon Reach Your Desktop

Related Posts

  • Mobiveil and Crossbar Partner to Put ReRAM on SSDs

  • Panasonic To Partner With UMC To Produce ReRAM

  • Fujitsu Launches First 4 Mbit ReRAM

  • SanDisk and HP Team Up to Create Memory-Driven Computing Solutions

  • Toshiba To Move From 3D NAND to 3D ReRAM in 2020

  • Micron to Discuss Emerging Memories at 2014 Symposia on VLSI Technology and Circuits

  • Sony And Micron Showcase 16Gb ReRAM

  • Sony To Commercialize 16Gb ReRAM in 2015

Latest News

GEEKOM to Unveil World's Most Powerful AI Mini PC at IFA 2025
Enterprise & IT

GEEKOM to Unveil World's Most Powerful AI Mini PC at IFA 2025

Dolby Unveils Dolby Vision 2
Consumer Electronics

Dolby Unveils Dolby Vision 2

Samsung Launches All-New Sound Tower at IFA 2025
Consumer Electronics

Samsung Launches All-New Sound Tower at IFA 2025

LG Display 4th-Generation OLED Panel obtains industry’s first Perfect Reproduction Verification
Enterprise & IT

LG Display 4th-Generation OLED Panel obtains industry’s first Perfect Reproduction Verification

Viltrox launches AF 56mm Ultra-large aperture F1.2 Pro E and XF (APS-C) lenses
Cameras

Viltrox launches AF 56mm Ultra-large aperture F1.2 Pro E and XF (APS-C) lenses

Popular Reviews

be quiet! Dark Mount Keyboard

be quiet! Dark Mount Keyboard

be quiet! Light Loop 360mm

be quiet! Light Loop 360mm

be quiet! Light Mount Keyboard

be quiet! Light Mount Keyboard

Noctua NH-D15 G2

Noctua NH-D15 G2

Terramaster F8-SSD

Terramaster F8-SSD

be quiet! Light Base 600 LX

be quiet! Light Base 600 LX

Soundpeats Pop Clip

Soundpeats Pop Clip

be quiet! Pure Base 501

be quiet! Pure Base 501

Main menu

  • Home
  • News
  • Reviews
  • Essays
  • Forum
  • Legacy
  • About
    • Submit News

    • Contact Us
    • Privacy

    • Promotion
    • Advertise

    • RSS Feed
    • Site Map
  • About
  • Privacy
  • Contact Us
  • Promotional Opportunities @ CdrInfo.com
  • Advertise on out site
  • Submit your News to our site
  • RSS Feed