Elpida Ramps Up Production of 30nm DRAM
Elpida Memory, Inc. today announced that it will commence full-scale mass production of 30nm process DRAM in May 2011. Elpida completed development of 30nm process...
Elpida Develops 4-Gigabit DDR2 Mobile RAM For Smart phones
Elpida Memory, Inc. said on Thursday it has developed a 4-gigabit DDR2 Mobile RAM that employs 30nm process. This new Mobile RAM features a low...
Hynix Introduces New DDR4 DRAM
Hynix Semiconductor today announced that it has developed 2Gb DDR4 DRAM and DDR4 DRAM based 2GB ECC-SODIMM (Error Check & Correction Small Outline Dual In-line...
Elpida memory Expects No Supply Interruptions
Elpida Memory, Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced it expected no interruptions to its product supply following the catastrophic...
Hynix Develops World's First 16GB DDR3 Single Package Chip
Hynix Semiconductor said Wednesday it has developed the world's largest dynamic random access memory (DRAM) for a single package, using the Through Silicon...
Elpida and Rexchip Achieve 1-Gigabit DDR3 SDRAM Prototype
Elpida Memory and Rexchip Electronics today announced the successful joint pilot production of 1-gigabit DDR3 SDRAMs featuring 4F2 memory cell architecture. The pilot run was...
Elpida To Purchase Powerchip's PC DRAM Products
Japanese PC memory maker Elpida Memory and Taiwan's Powerchip Technology have reached a non-binding understanding that Elpida will purchase all DRAM products that Powerchip will...
Hynix Develops 4-Gigabit DDR3 30nm DRAM
South Korea's Hynix Semiconductor said Wednesday that it has developed a new memory chip based on 30-nanometer technology. Hynix developed the world's first 4-gigabit DDR3...
Elpida Begins Sample Shipments of 30nm Process 4-Gigabyte DDR3 SO-DIMM
Elpida Memory today announced it has begun sample shipments of its newly developed 30nm process 4-gigabyte DDR3 SO-DIMM. The new memory module was built using...
Hynix, IBM And Samsung Talk About Latest STT RAM Developments at IEDM
During the International Electron Device Meeting (IEDM) in Sans Francisco this week, IBM, Samsung and the Hynix presented papers on Spin torque MRAM, or STT...
