Computex: Micron Announces New High-Capacity, 16nm Triple-Level-Cell NAND
Micron Technology announced at Computex the addition of new 16nm TLC NAND to its portfolio of flash storage products, providing a purpose-built solution for cost-sensitive consumer applications seeking high performance and reliability. The new TLC NAND is built on their 16-nanometer (nm) process and delivers a balanced set of features for applications like USB drives and consumer solid state drives.
TLC, or triple-level cell, is a technology that fits three bits in every flash data cell, creating greater cost and size efficiency.
Micron's flash customers and ecosystem partners worldwide have already begun working to integrate this new NAND with their latest designs, ensuring quick adoption in end applications.
"Our new TLC NAND technology meets the ever-rising demand for reliable high-capacity storage," said Kevin Kilbuck, director of NAND planning at Micron. "We see 16nm TLC as an excellent solution for 2015 consumer applications as we drive toward 3D NAND TLC production in 2016."
The new 16GB TLC NAND is in production and available now. Consumer SSD solutions based on this technology to come to market this fall. Micron also expects to release its own TLC-based client SSD in that timeframe.