Intel and Micron Open Singapore NAND Flash Memory Operation
Intel and Micron today expanded their NAND Flash memory joint venture operations with the official opening of IM Flash Singapore.
The US$3 billion facility is expected to employ about 1,200 and is
currently ramping production of the companies' 25 nanometer (nm) NAND
Flash memory. The companies announced the opening of the 300 millimeter
facility at a ceremony with Singapore government representatives,
including Prime Minister Lee Hsien Loong.
IM Flash has ramped production of 25nm NAND Flash memory at the Singapore facility since mid-2010. The facility is expected to be at full production levels later in 2011.
Along with the new Singapore facility, the joint venture produces products at two other joint venture manufacturing locations: Lehi, Utah, and Micron's Manassas, Va., facility. Intel and Micron also recently introduced 20nm NAND Flash memory process technology that will be implemented at the IM Flash facilities during the course of 2011.
IM Flash has ramped production of 25nm NAND Flash memory at the Singapore facility since mid-2010. The facility is expected to be at full production levels later in 2011.
Along with the new Singapore facility, the joint venture produces products at two other joint venture manufacturing locations: Lehi, Utah, and Micron's Manassas, Va., facility. Intel and Micron also recently introduced 20nm NAND Flash memory process technology that will be implemented at the IM Flash facilities during the course of 2011.
