Micron Demonstrates 4GB FBDIMM
Micron Technology has demonstrated what it describes as the industry's first 4-Gbyte (GB) density FBDIMMs.
These FBDIMMs, using 1-Gbit DDR2-533 components, allow server platforms to realize the maximum
available capacities of system memory for outstanding performance and reliability.
According to the company, it remains the industry's top FBDIMM memory supplier with a complete line of modules with densities from 256 Mbytes to 4 Gbytes and speed grades extending to PC2-5300.
A key attribute of the FBDIMM channel architecture is the high-speed, serial, point-to-point connection between the memory controller and modules on the channel. To address this attribute, companies such as Integrated Device Technology, Inc and Intel Corp are developing advanced memory buffer (AMB) devices to interface between the high-speed serial interface and industry standard DDR2 SDRAM.
Micron 4-Gbyte FBDIMMs incorporate AMB devices, which are primarily responsible for collecting and distributing data from or to the FBDIMM, buffering the data internally on the chip and receiving or forwarding it to the next FBDIMM or memory controller.
According to the company, it remains the industry's top FBDIMM memory supplier with a complete line of modules with densities from 256 Mbytes to 4 Gbytes and speed grades extending to PC2-5300.
A key attribute of the FBDIMM channel architecture is the high-speed, serial, point-to-point connection between the memory controller and modules on the channel. To address this attribute, companies such as Integrated Device Technology, Inc and Intel Corp are developing advanced memory buffer (AMB) devices to interface between the high-speed serial interface and industry standard DDR2 SDRAM.
Micron 4-Gbyte FBDIMMs incorporate AMB devices, which are primarily responsible for collecting and distributing data from or to the FBDIMM, buffering the data internally on the chip and receiving or forwarding it to the next FBDIMM or memory controller.
