Micron To Start Volume Production Of DDR4 DRAM This Year
Micron Technology today announced development of its
first fully functional DDR4 DRAM module. The company has
begun sampling and has received feedback from its
customers to support implementation for applications in
2013.
DDR4 is more power-efficient and faster than the current
DDR3 memory, which is found in most new computers that
ship today.
It is expected that the enterprise and micro-server markets will take full advantage of the new features and specifications designed into DDR4, accelerating early adoption of the technology. In addition, the fast-growing ultrathin client and tablet markets will also benefit from new opportunities enabled by the power savings and performance features of Micron's DDR4.
Codeveloped by Nanya and based on Micron's 30-nanometer (nm) technology, the 4-gigabit (Gb) DDR4 x8 part is the first piece part of a portfolio of DDR4-based modules, which will include RDIMMs, LRDIMMs, 3DS, SODIMMs and UDIMMs (standard and ECC). For the soldered down space, x8, x16, and x32 components will also be available, with initial speeds up to 2400 megatransfers per second (MT/s), increasing to the JEDEC-defined 3200 MT/s.
"With the JEDEC definition for DDR4 very near finalization, we've put significant effort into ensuring that our first DDR4 product is as JEDEC-compatible as it can be at this final stage of its development," said Brian Shirley, vice president for Micron's DRAM Solutions Group. "We've provided samples to key partners in the market place with confidence that the die we give them now is the same die we will take into mass production."
As JEDEC finalizes the DDR4 specifications, Micron is positioned to ecome fully compliant with its 30nm 4Gb DDR4 part. Volume production is planned for 4Q12.
It is expected that the enterprise and micro-server markets will take full advantage of the new features and specifications designed into DDR4, accelerating early adoption of the technology. In addition, the fast-growing ultrathin client and tablet markets will also benefit from new opportunities enabled by the power savings and performance features of Micron's DDR4.
Codeveloped by Nanya and based on Micron's 30-nanometer (nm) technology, the 4-gigabit (Gb) DDR4 x8 part is the first piece part of a portfolio of DDR4-based modules, which will include RDIMMs, LRDIMMs, 3DS, SODIMMs and UDIMMs (standard and ECC). For the soldered down space, x8, x16, and x32 components will also be available, with initial speeds up to 2400 megatransfers per second (MT/s), increasing to the JEDEC-defined 3200 MT/s.
"With the JEDEC definition for DDR4 very near finalization, we've put significant effort into ensuring that our first DDR4 product is as JEDEC-compatible as it can be at this final stage of its development," said Brian Shirley, vice president for Micron's DRAM Solutions Group. "We've provided samples to key partners in the market place with confidence that the die we give them now is the same die we will take into mass production."
As JEDEC finalizes the DDR4 specifications, Micron is positioned to ecome fully compliant with its 30nm 4Gb DDR4 part. Volume production is planned for 4Q12.
