At ISSCC 2010, a record number of emerging nonvolatile memory technologies including Phase-Change Memory (PCM), Magnetoresistive RAM (MRAM), and Resistive Ram (RRAM), will be reported...

NEC announced today the world's first development of a magnetic random access memory (MRAM) with current-induced domain wall motion using perpendicular magnetic anisotropy material. Perpendicular...

NEC has announced the successful operational demonstration of a 32Mb MRAM (Magnetic Random Access Memory) that can be embedded in SoCs. NEC and NEC Electronics...

Samsung and Hynix Semiconductor, the world's top two computer memory chip makers, said Wednesday that they will jointly research and develop spin-torque-transfer magnetic-random-access-memory (STT-MRAM) chips...

Computer memory that combines the high performance and reliability of flash with the low cost and high capacity of the hard disk drive could be...

NEC today announced that it has succeeded in developing a new SRAM-compatible MRAM that can operate at 250MHz, the world's fastest MRAM operation speed. ...

Toshiba today announced important breakthroughs in key technologies for magnetoresistive random access memory (MRAM), a promising, next-generation semiconductor memory device. The company has successfully fabricated...

IBM and TDK today announced a joint research and development program to develop high capacity MRAM (Magnetic Random Access Memory) technology utilizing the spin momentum...

NEC has succeeded in developing new magnetoresistive random access memory (MRAM) cell technology suitable for high speed memory macro embedded in next generation system LSIs...

Toshiba today announced a newly developed FeRAM?a Ferroelectric Random Access Memory?that redefines industry benchmarks for density and operating speed. The new chip takes FeRAM storage...