Everspin has begun sampling 256Mb ST-MRAM samples, enabling new product solutions using an MRAM-based Storage Class Memory (SCM). This 256Mb ST-MRAM product breaks the record...
IBM has demonstrated Everspin's latest Spin Torque DDR3 MRAM in the ConTutto platform in a Power8 system. The demonstration showed how Everspin's DDR3 ST-MRAM operates...
Toshiba has developed a spin-transfer torque magnetoresistive random-access memory (STT-MRAM) circuit for use in high-performance processors and system-on-a-chip (SoC) integrated circuits, implementing a 1-Mb class...
Micron Technology and Singapore's A*STAR Data Storage Institute (DSI) are extending their collaboration on the development of STT-MRAM, a promising alternative non-volatile memory technology, for...
Everspin Technologies will demonstrate the first commercially-available Spin Torque MRAM (ST-MRAM) at the Flash Memory Summit, Aug. 5-7, 2014 in Santa Clara, Calif. Everspin and...
Toshiba developed a high-performing, energy-efficient Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) that replaces SRAM used as a cache memory for microprocessors. The new...
Globalfoundries today joined a collaborative research program run by European research institute IMEC on STT-MRAM (spin-transfer torque magnetoresistive random access memory) technology. The first IC...
Everspin Technologies leads the industry in commercializing the first Spin-Torque Magnetoresistive RAM (ST-MRAM), a new type of high performance and ultra-low latency memory, which offers...