Everspin has begun sampling 256Mb ST-MRAM samples, enabling new product solutions using an MRAM-based Storage Class Memory (SCM). This 256Mb ST-MRAM product breaks the record for the highest density commercial MRAM currently available in the market. Everspin plans further density increases and expects to sample a 1Gb product based on its proprietary perpendicular magnetic tunnel junction (pMTJ) spin torque technology (ST-MRAM) later this year. Everspin’s MRAM has demonstrated interface speeds comparable to DRAM; the new 256Mb and 1Gb ST-MRAM products will continue this performance with DDR3 and DDR4 interfaces, respectively.
Storage and server OEMs have already been evaluating Everspin’s ST-MRAM products and are planning to utilize these higher density devices
ST-MRAM is a non-volatile memory that could change the landscape of storage and server applications. These applications can now protect "hot data" in MRAM as the first tier of storage. MRAM instantly secures data in flight without the concern of data corruption due to the unreliability of power sources, as well as the slower write performance of NAND and other persistent memories.
Everspin’s ST-MRAM delivers the following advantages:
- Supports 100,000 times faster write speeds than NAND flash
- Operates on the DDR3/DDR4 DRAM memory interface
- Requires no wear leveling
- Provides the highest endurance of currently available non-volatile memories
- Delivers low power operation
- Enables instant on/off functionality
Everspin’s 256Mb ST-MRAM with a DDR3 compatible interface is the first ST-MRAM produced utilizing the 300mm manufacturing MRAM line from GLOBALFOUNDRIES.
Initial samples will be based on an in-plane MTJ technology and will soon transition to pMTJ ST-MRAM technology for volume production. Everspin will offer both discrete ST-MRAM products and NVDIMMs for ease of adoption and system compatibility.