Everspin Technologies, Inc. has amended its Spin-transfer Torque (STT-MRAM) joint development agreement (JDA) with GLOBALFOUNDRIES to set the terms for a future project on an advanced 12nm FinFET MRAM solution.
Everspin and GF have been partners on 40nm, 28nm, and 22nm STT-MRAM development and manufacturing processes. The company is in production of discrete STT-MRAM solutions on 40 and 28nm, including its 1Gb DDR4 device. GF recently announced it has achieved initial production of embedded MRAM (eMRAM) on its 22FDX platform.
Everspin has over 650 patents and applications related to MRAM in its intellectual property portfolio and is the only memory manufacturer in production of discrete MRAM.
The company says it has already shipped over 125M units of discrete MRAM products to date and has over 1000 customers. GF is leading in eMRAM development and aims to displace embedded flash memory, particularly in microcontroller applications and wireless connected IoT. eMRAM provides superior performance to eFlash, particularly write speeds and lower power, and supports long term data retention at the higher temperatures that embedded applications require. eMRAM is also well suited to replace eSRAM due to its data persistence, lower power and size with similar performance and endurance capabilities.
Everspin’s STT-MRAM and Toggle MRAM devices deliver protection against power loss without the use of supercapacitors or batteries, and in many applications provide the performance and endurance required for code and data storage in a single persistent device.