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SEI

SEI initiates mass-production of 2-inch low-dislocation GaN single crystal substrate for violet lasers

SEI initiates mass-production of 2-inch low-dislocation GaN single crystal substrate for violet lasers

Apr 18,2003 0
Sumitomo Electric Industries, (SEI) announced the mass-production of 2-inch gallium nitride (GaN) substrate. GaN substrate is essential to the stable manufacture of the high-power, high-quality...

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