Breaking News

Samsung’s One UI 8 Expands to More Galaxy Devices ASUS Unveils ProArt Displays, PC Solutions, and More at IBC 2025 GIGABYTE AI-Powered X870E AORUS X3D Motherboards Redefining Performance and Innovation Sony Reimagines its 10 Series with Xperia 10 VII MSI Unveils MPG Infinite Z3 X3D Gaming Desktop

logo

  • Share Us
    • Facebook
    • Twitter
  • Home
  • Home
  • News
  • Reviews
  • Essays
  • Forum
  • Legacy
  • About
    • Submit News

    • Contact Us
    • Privacy

    • Promotion
    • Advertise

    • RSS Feed
    • Site Map

Search form

Renesas Develops 16nm FinFET SRAM

Renesas Develops 16nm FinFET SRAM

Enterprise & IT Dec 17,2014 0

Renesas Electronics has developed a new circuit technology for automotive information devices using 16nm and more advanced process technologies. The company prototyped SRAM by using the new technology and Taiwan Semiconductor Manufacturing Co Ltd's 16nm FinFET process as cache memory for CPU cores of SoCs and real-time image processing blocks. And it confirmed that the SRAM operates at a speed of 641ps (picoseconds) with a voltage of 0.7V.

The japanese company developed a FinFET-compatible circuit technology that can stably read and write data with a low voltage.

A new circuit technology was developed using the "word line overdrive" method, which realizes high-speed reading and writing at the same time with a low voltage. As the process is scaled down, the lowest operating voltage deteriorates due to the variation of elements. As a result, an assist circuit is used to solve the problem. It improves operation stability at the time of reading data by slightly lowering the voltage of word lines.

However, with this method, the operation margin deteriorates at the time of writing data, and the reading speed lowers.

So Renesas developed an assist technology that takes advantage of the characteristics of FinFET and slightly increases the voltage of word lines so that the pulse width at the time of reading data becomes different from that at the time of writing data. As a result, it became possible to realize high-speed reading while ensuring an operation margin at the time of reading and writing data.

Second, Renesas developed a design technique in consideration of the variation of FinFET elements, which is different from the variation of the elements of planar MOSFET. For example, at the center and edges of an array of memory cells, an offset occurs to the bit line current at the time of reading data, generating a current difference. As a result, it becomes impossible to ensure a sense amplifier margin at the time of reading data, potentially making the device malfunction.

Renesas quantitatively measured the current offset with the prototyped chip. And, based on the measurement results, it enabled to finely adjust circuits and ensure an optimal operation margin. As a result, it becomes possible to realize a high reliability required for automotive information equipment, the company said.

Tags: Renesas technologysram
Previous Post
LG, Samsung, To Dominate The TV Market in 2015
Next Post
Sony Film Debut Canceled After Threats

Related Posts

  • Renesas Introduces First PCIe 6.0 Chips for Next-Generation Devices

  • Renesas to License Chip IP As It Seeks For New Revenue Sources

  • Renesas to Buy Integrated Device Technology for $6.7 Billion

  • DENSO to Increase Its Shareholding in Renesas

  • Toyota Selects Renesas Chips for its Autonomous-Driving Vehicles

  • Renesas To Showcase New Autonomous-Driving Vehicle At CES

  • Renesas To Buy Intersil For $3.2 Billion

  • TDK To Buy Semiconductor Factory From Renesas Electronics

Latest News

Samsung’s One UI 8 Expands to More Galaxy Devices
Smartphones

Samsung’s One UI 8 Expands to More Galaxy Devices

ASUS Unveils ProArt Displays, PC Solutions, and More at IBC 2025
Enterprise & IT

ASUS Unveils ProArt Displays, PC Solutions, and More at IBC 2025

GIGABYTE AI-Powered X870E AORUS X3D Motherboards Redefining Performance and Innovation
PC components

GIGABYTE AI-Powered X870E AORUS X3D Motherboards Redefining Performance and Innovation

Sony Reimagines its 10 Series with Xperia 10 VII
Smartphones

Sony Reimagines its 10 Series with Xperia 10 VII

MSI Unveils MPG Infinite Z3 X3D Gaming Desktop
Gaming

MSI Unveils MPG Infinite Z3 X3D Gaming Desktop

Popular Reviews

be quiet! Dark Mount Keyboard

be quiet! Dark Mount Keyboard

be quiet! Light Mount Keyboard

be quiet! Light Mount Keyboard

Terramaster F8-SSD

Terramaster F8-SSD

be quiet! Light Base 600 LX

be quiet! Light Base 600 LX

Noctua NH-D15 G2

Noctua NH-D15 G2

Soundpeats Pop Clip

Soundpeats Pop Clip

be quiet! Pure Base 501

be quiet! Pure Base 501

Akaso 360 Action camera

Akaso 360 Action camera

Main menu

  • Home
  • News
  • Reviews
  • Essays
  • Forum
  • Legacy
  • About
    • Submit News

    • Contact Us
    • Privacy

    • Promotion
    • Advertise

    • RSS Feed
    • Site Map
  • About
  • Privacy
  • Contact Us
  • Promotional Opportunities @ CdrInfo.com
  • Advertise on out site
  • Submit your News to our site
  • RSS Feed