Samsung has introduced introduces its new 28 megapixel (MP) APS-C CMOS image sensor for digital cameras, which offers superior light absorption thanks to the back-side illuminated (BSI) pixel technology and 65-nanometer (nm) low-power copper process. Currently in mass production, the new S5KVB2 is designed into Samsung’s new compact system camera, the NX1, and is showcased along with the camera at Photokina 2014 held in Cologne, Germany, September 16 to 21.

The S5KVB2 is the first APS-C sensor to adopt back-side illuminated (BSI) pixel technology. The BSI structure moves the metal layers to the rear side of the photodiode to reduce the loss of light. Applying BSI pixels, Samsung’s newest imager improves the light sensitivity of each pixel and increases light absorption in peripheral areas by approximately 30 percent, resulting in sharper images compared to a conventional front-side illumination (FSI) pixel-based imager.

By moving the position of the photo diode, the sensor’s metal wiring layout is better optimized for faster continuous speed. As a result, the S5KVB2 offers 30fps video recording at Ultra HD resolution.

In addition, the imager adopted Samsung’s 65nm low-power copper process, which is well ahead of 180nm aluminium process, generally used in the camera sensor industry. Based on the finer ICs and the use of copper, the 65nm copper process enables power consumption to be reduced compared to an imager based on a previous process technology.

Samsung claims that the advanced fabrication process and IC design also decreases the S5KVB2's random noise.