The Optoelectronics and Systems Laboratories (OES) of the Industrial Technology Research Institute (ITRI) has successfully developed Taiwan’s first gallium nitride (GaN) violet-light laser diode and has scheduled a formal launch for December 28. GaN laser diodes are commonly used in pick-up heads for high-density DVD disc drives, offering 15Gbit storage capacity. OES has completed development using the MOCVD (metallo-organic chemical vapor deposition) process on epitaxial wafers. OES has also developed GaN LEDs (light-emitting diodes), which are being used to make new LED lightboards with a longer life span and better heat dispersion.