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Researchers Develop Ultra-fast, 128Mb STT-MRAM

Researchers Develop Ultra-fast, 128Mb STT-MRAM

Enterprise & IT Dec 28,2018 0

A research team at the Japanese Tohoku University has developed 128Mb-density STT-MRAM (spin-transfer torque magnetoresistive random access memory) with a write speed of 14 ns for use in embedded memory applications.

This is currently the world's fastest write speed for embedded memory application with a density over 100Mb and could pave the way for the mass-production of large capacity STT-MRAM.

STT-MRAM is capable of high-speed operation and consumes very little power as it retains data even when the power is off. It is gaining traction as the next-generation technology for applications such as embedded memory, main memory and logic. Three semiconductor fabrication plants have already announced plans to start risk mass-production of STT-MRAM.

Currently available STT-MRAM has a capacity ranging from 8Mb-40Mb. But in order to make STT-MRAM more practical, it is necessary to increase the memory density. The team at the Center for Innovative Integrated Electronic Systems (CIES) has increased the memory density of STT-MRAM by developing STT-MRAMs in which magnetic tunnel junctions (MTJs) are integrated with CMOS. The approach reduces the power-consumption of embedded memory such as cache and eFlash memory.

MTJs were miniaturized through a series of process developments. To reduce the memory size needed for higher-density STT-MRAM, the MTJs were formed directly on via holes - small openings that allow a conductive connection between the different layers of a semiconductor device. By using the reduced size memory cell, the research group has designed 128Mb-density STT-MRAM and fabricated a chip.

In the fabricated chip, the researchers measured a write speed of subarray, and proved a an operation of 14ns at a low power supply voltage of 1.2 V.

The results of this research were presented at the 2018 International Electron Devices Meeting held in San Francisco, U.S.A., on December 5, 2018.

Tags: ST-MRAMTohoku University
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