Samsung Electronics announced that it has become the first to begin mass producing 16 gigabit (Gb) NAND flash, the highest capacity memory chip now available...
Japan's Toshiba said on Wednesday it will match rival Samsung 's March launch of the industry's first 2-Gigabyte NAND flash chip by mass-producing a chip...
Samsung announced that it is now sampling its 16-gigabit (Gb) NAND flash memory ? the first NAND flash using 50 nanometer (nm) process technology. The...
Samsung today announced major component technology advancements including the 40-nanometer (nm) 32-Gigabit (Gb) NAND flash and the first prototype of the next-generation of memory -...
Toshiba and SanDisk today announced that, further to definitive agreements that the companies entered into in July 2006, construction has started of Fab 4, a...
Toshiba today announced that it has brought logical block addressing (LBA) to NAND Flash memory, and that it would launch LBA-NAND, a new line-up of...
Micron Technology, Inc., and Intel Corporation today announced they are sampling the industry's first NAND flash memory built on industry-leading 50 nanometer (nm) process technology...
Samsung has begun mass producing an 8-Gigabit (Gb) NAND flash memory device, providing a much larger storage density for consumer and mobile applications such as...
msystems announced its x4 technology, a new technology that is claimed to offer more economic NAND flash manufacturing with no changes to manufacturing processes. The...