Samsung today held the eighth annual Samsung Mobile Solutions Forum at the Westin Taipei, where it launched several technologies and devices supporting the next wave...

Toshiba and SanDisk today celebrated the opening of Fab 5, the third 300mm wafer NAND fabrication facility at Toshiba's Yokkaichi Operations in Mie Prefecture, Japan...

Samsung has started the production of a high-performance toggle DDR 2.0 multi-level-cell (MLC) memory chip. The new NAND flash chip features a 64 gigabit (Gb)...

Toshiba and Sandisk today announced a 64-gigabit (Gb), 2-bits-per-cell (X2) based monolithic chip made on 19-nanometer (nm) technology, the most advanced memory process technology node...

Toshiba has enhanced its NAND flash portfolio with the introduction of next-generation 24-nanometer (nm) generation "SmartNAND," which integrate robust error management into the NAND package...

Micron Technology today unveiled a new portfolio of its RealSSD solid-state drives (SSDs) for the flash-based notebook market. A new breed of notebooks are entering...

Intel-Micron will talk about its 25nm 64Gb MLC NAND technology and TSMC's will present a 20nm technology platform at the IEEE International Electron Devices Meeting...

Micron Technology today introduced a portfolio of high-capacity flash memory products that will lengthen the life of NAND for years to come. By integrating the...

Samsung announced today the industry?s first production of a 3-bit-cell (3bit), 64 gigabit (Gb) NAND flash using 20 nanometer (nm)-class process technology. The dvanced new...

Elpida Memory and Spansion today announced they have created the industry's first charge-trapping 1.8 V, 4-gigabit SLC (Single Level Cell) NAND Flash memory. This NAND...