Toshiba And Sandisk Launch 19nm Manufacturing Process Tehnology
Toshiba and Sandisk today announced a 64-gigabit (Gb), 2-bits-per-cell (X2) based monolithic chip made on 19-nanometer (nm) technology, the most advanced memory process technology node in the world.
This latest technology enables the companies to produce embedded and
removable storage devices with the high capacities and small form
factors used in mobile phones, tablet computers and other devices.
Toshiba and Sandisk are operating NAND flash memory chip factories in Japan under a joint venture agreement.
"We are excited to introduce the world's smallest and lowest-cost NAND flash chips based on industry-leading 19nm process technology in our ongoing collaboration with our manufacturing partner Toshiba," said Yoram Cedar, executive vice president and chief technology officer, SanDisk. "Products based on this technology are designed to enable new applications, form factors and consumer experience that will continue to drive the flash industry to new heights."
The 19nm memory die uses the most sophisticated flash memory technology node to date, including advanced process innovations and cell-design solutions. SanDisk's All-Bit-Line (ABL) architecture with proprietary programming algorithms and multi-level data storage management schemes help yield multi-level cell (MLC) NAND flash memory chips that do not sacrifice performance or reliability. The 19nm process products are also equipped with Toggle DDR2.0, which enhances data transfer speed.
The companies will sample its 19nm 64Gb X2 device this quarter and expects to begin high-volume production in the second half of 2011. At that time, both SanDisk and Toshiba will also add 3-bits-per-cell (X3) products fabricated with the 19nm process technology to its product lineup.
Toshiba and Sandisk are operating NAND flash memory chip factories in Japan under a joint venture agreement.
"We are excited to introduce the world's smallest and lowest-cost NAND flash chips based on industry-leading 19nm process technology in our ongoing collaboration with our manufacturing partner Toshiba," said Yoram Cedar, executive vice president and chief technology officer, SanDisk. "Products based on this technology are designed to enable new applications, form factors and consumer experience that will continue to drive the flash industry to new heights."
The 19nm memory die uses the most sophisticated flash memory technology node to date, including advanced process innovations and cell-design solutions. SanDisk's All-Bit-Line (ABL) architecture with proprietary programming algorithms and multi-level data storage management schemes help yield multi-level cell (MLC) NAND flash memory chips that do not sacrifice performance or reliability. The 19nm process products are also equipped with Toggle DDR2.0, which enhances data transfer speed.
The companies will sample its 19nm 64Gb X2 device this quarter and expects to begin high-volume production in the second half of 2011. At that time, both SanDisk and Toshiba will also add 3-bits-per-cell (X3) products fabricated with the 19nm process technology to its product lineup.
