- a 32 nanometer (nm) dual-core application processor, Exynos 4212
- an ultra high-speed LPDDR3 memory
- advanced CMOS image sensor solutions, including
a 1/8.2-inch 1.2 Megapixel (Mp) imager
a 1/2.3-inch 16Mp high-sensitivity imager
- a 20nm-class high-performance eMMC embedded NAND solution
Exynos 4212 processor
Samsung introduced the latest addition to its Exynos product family - the Exynos 4212 - a dual core ARM Cortex-A9 application processor, designed on Samsung?s 32nm High-K Metal Gate (HKMG) low-power process.
In addition to the 25 percent increase in processing power, the new processor features an enhanced graphics processing unit (GPU) that is capable of delivering 50 percent higher 3D graphics performance over the previous processor generation from Samsung.
The Exynos 4212 also incorporates a rich portfolio of codec accelerators that support digital still images, video recording and play-back at 1080p full-HD resolution, an image signal processor and an on-chip HDMI 1.4 interface.
Samsung's new Exynos 4212 application processor will be sampling to select customers in Q4 2011.
1.2 Megapixel (Mp) imager
Samsung's new 1.2-Megapixel (Mp), 1/8.2-inch CMOS image sensor (CIS) system-on-chip (SoC), the S5K8AA, support HD video and video telephony with a high-quality offering that can be used in camera modules shorter than 3mm for the slimmest mobile device designs.
Samsung's new S5K8AA supports 30 frames per second (fps) at HD (720p) video and 60fps at VGA resolution. It also achieves high low-light sensitivity during real-time video capture by utilizing Samsung?s 1.4 micrometer (um) backside illumination (BSI) pixel technology.
The S5K8AA is fitting into a 5.5 x 5.5mm camera module with a 2.8mm low profile.
Samsung's S5K8AA image sensor is currently sampling to Samsung's qualified customers.
16Mp high-sensitivity imager
Samsung?s new 1/2.3-inch 16 Megapixel (Mp) CMOS image sensor - the S5K2P1 - features the company's 1.34 micrometer (um) backside illumination (BSI) pixel technology.
This 16Mp resolution imager is designed for high-performance smartphones as well as digital still cameras and camcorders. The sensor supports a native 16:9 format video at up to 8.3Mp resolution at 60 frames per second and maximum 16 Megapixel-resolution for point-and-shoot images at 30 frames per second without shutter lag effect.
Using Samsung's 1.34um BSI pixel technology, the S5K2P1 delivers excellent sensitivity and low-noise performances.
Samsung is currenly sampling the S5K2P1 image sensor to select customers and plans to start mass production in November 2011.
High-speed LPDDR3 memory
Samsung's first monolithic four gigabit (Gb) LPDDR3 (low power double-data-rate 3) memory has been designed using 30 nanometer (nm) class technology for mobile applications such as smartphones and tablet PCs. LPDDR3 DRAM is needed to support faster processors, high resolution displays and 3D graphics in high-end next generation mobile devices
The new 4Gb LPDDR3 DRAM can transfer data at up to 1,600 megabits per second (Mbps), which is approximately 1.5 times faster than the industry's current highest performance LPDDR2, which operates at 1,066Mbps. The new component also consumes 20 percent less electrical power than its predecessor.
In addition, by stacking two 4Gb chips, Samsung is enabling use of a single 1GB LPDDR3 package, with a data transmission rate up to 12.8 gigabytes (GB) per second.
Starting next quarter, Samsung will begin sampling the 4Gb-based LPDDR3 chips to key mobile device providers. The chips are expected to be widely adopted next year in advanced mobile applications including next-generation smartphones and tablet PCs.
64-Gigabyte e-MMC NAND Memory
Samsung has also developed a high-performance 64-gigabyte (GB) embedded memory with 64Gb NAND for smartphones, tablets and other mobile devices.
The new 64GB embedded multimedia card (e-MMC) provides the industry's highest performance and thinnest profile available, utilizing Samsung's 64-gigabit (Gb) NAND with a toggle DDR 2.0 interface and the company's latest 20 nanometer (nm) class process technology.
The 64GB e-MMC is being produced for high-end mobile devices in an extremely thin, eight-die stack, only 1.4 millimeters thick. It processes random write commands at 400 input/output operations per second (IOPS), which is quadruple the speed of many conventional e-MMC solutions made with 30nm-class NAND flash memory chips.
The component features sequential read speeds of up to 80 megabytes per second (MB/s) and sequential write speeds of 40MB/s, a more than 3X improvement over high-end external mobile memory cards that now offer sequential speeds of 24MB/s and 12MB/s, respectively.
The 64GB e-MMC provides data storage space of up to 16,000 MP3 files in a single package that weighs only 0.6 grams.
Samsung provided its first 64GB e-MMC in January of 2010 using 30nm-class 32Gb NAND flash components, and late last year started producing 64GB eMMC with 20nm-class 32Gb NAND flash. The new eMMC utilizes the latest 20nm-class 64Gb NAND flash, which provides a 60 percent gain in productivity.