Samsung Launches First 3rd-generation (16GB) HBM2E
Samsung Electronics today announced the market launch of ‘Flashbolt’, its third-generation High Bandwidth Memory 2E (HBM2E).
The new 16-gigabyte (GB) HBM2E is suited to...
Samsung Electronics today announced the market launch of ‘Flashbolt’, its third-generation High Bandwidth Memory 2E (HBM2E).
The new 16-gigabyte (GB) HBM2E is suited to...
SK hynix Inc. presents its semiconductor technologies leading the 4th Industrial Revolution at CES 2020.
In line with its “Memory Centric World” theme, SK hynix...
Fujitsu Limited will begin global salesof the PRIMEHPC FX1000 and PRIMEHPC FX700 models from the "Fujitsu Supercomputer PRIMEHPC" series, which utilize the technology of supercomputer...
GLOBALFOUNDRIES and SiFive, Inc. are working to extend high DRAM performance levels with High Bandwidth Memory (HBM2E) on GF’s 12LP+ FinFET solution, with 2.5D packaging...
Despite the recent decline in the demand of DRAM, SK Hynix says it will continue to focus on its key technology competitiveness while developing next-generation...
SK Hynix Inc. has developed HBM2E DRAM product with the industry’s highest bandwidth.
The new HBM2E boasts approximately 50% higher bandwidth and 100% additional capacity...
Samsung Electronics announced its new High Bandwidth Memory (HBM2E) product at NVIDIA’s GPU Technology Conference (GTC) to deliver high DRAM performance levels for use in...
JEDEC Solid State Technology Association today announced the publication of an update to JESD235 High Bandwidth Memory (HBM) DRAM standard.
HBM DRAM is used...
Samsung has started mass production of its 2nd-generation 8-gigabyte (GB) High Bandwidth Memory-2 (HBM2) with the fastest data transmission speed on the market today....