Samsung's embedded MCP solutions are fabricated in packages that consist of a four gigabyte (GB) e-MMC (Embedded MultiMediaCard) based on 20nm-class NAND flash memory for data storage, and a choice of 256 megabytes (MB), 512MBs or 768MBs of 30nm-class LPDDR2 DRAM for supporting high-performance mobile device systems. (Each is equivalent to 2Gb, 4Gb and 6Gb, respectively.)
The 30nm-class LPDDR2 DRAM chip in the new eMCPs performs a key role in enhancing the performance of entry- to mid-level smartphones with a data transmission speed of 1,066 megabits per second (Mbps), which doubles the performance of the industry's previous mobile DRAM (MDDR). When compared to a 40nm-class LPDDR2 DRAM, the new 30nm-class LPDDR2 DRAM increases performance by approximately 30 percent, while consuming 25 percent less power. Also, applying the 30nm-class process technology improves chip manufacturing productivity by 60 percent over 40nm-class technology.
Samsung began providing high-performance 30nm-class 4Gb LPDDR2 DRAM in March of last year. In October, Samsung came up with high-density solutions such as a 2GB LPDDR2 package that stacks four 4Gb LPDDR2 DRAM and also first started using 30nm-class LPDDR2 DRAMs for eMCPs. Focusing on the high-end smartphone market, Samsung's previous eMCPs combined 1GB of 30nm-class LPDDR2 DRAM with 32GBs of eMMC memory using 20nm-class NAND flash.