Samsung Electronics is applying its “super-gap” strategy to its NAND flash memory technology, and is said to be developing 7th generation V-NAND flash memory featuring 160 layers or even more.

While Chinese YMTC recently announced its plan to mass-produce 128-layer NAND flash memory by the end of this year, Samsung Electronics is already preparing for the 7th generation V-NAND flash memory. According to Etnews.com, Samsung has already made a significant process as it has accelerated the development process of the new memory.

The South Korean company is looking into applying the “double-stack” technology to the 7th generation V-NAND flash memory. Contrary to the “single-stack” technology, this new approach uses a two-step etching process for the channel holes.

Samsung vice-chairman Kim Ki-nam announced during last month's general meeting of the shareholders that the company would push for the development of “7th generation V-NAND” in order to separate the company from its competitors.

Samsung did not reply to a request for a comment.