Elpida Completes Development of 512 Megabit DDR3 SDRAM
Elpida Memory announced the development of 512 Megabit DDR3 SDRAM--the next-generation memory for computing applications such as notebooks, desktop PCs and servers.
The new DDR3 architecture is claimed to feature high-speed data transfer of up to 1333 Megabits per second (Mbps), double the speed of the DDR2 architecture currently in volume production.
To achieve simultaneous high-speed operation with low-power consumption, Elpida has incorporated "dual-gate" transistor technology. This technology suppresses the leakage current in the DRAM device--an unwanted side effect that occurs when pursuing low-voltage operation while maintaining or improving transistor performance. The "dual-gate" transistor has recently been used for high-performance processors; however, this is its first use within a DRAM device.
Next-Generation Memory: DDR3 SDRAM
In addition to the significant increase in data transfer, the 512 Megabit DDR3 SDRAM device will also provide improved power consumption--1.5 Volt vs. the 1.8 Volt operation that is currently available in DDR2 architecture. A newly introduced automatic calibration feature for the output buffer will enhance the ability to control the system timing budget during variations in voltage and temperature.
Elpida's 512 Megabit DDR3 SDRAM will also utilize 90 nm process technology. Elpida has already established volume production at 90 nm which, in turn, will allow production on the newly developed DDR3 devices to be ramped as necessary to satisfy market demand.
Availability
Elpida's 512 Megabit DDR3 device is expected to ship as customer samples by the end of 2005. Initial production is anticipated for 2006 in accordance with market demand. Elpida also plans to develop higher density DDR3 products such as 1 Gigabit and 2 Gigabit.
To achieve simultaneous high-speed operation with low-power consumption, Elpida has incorporated "dual-gate" transistor technology. This technology suppresses the leakage current in the DRAM device--an unwanted side effect that occurs when pursuing low-voltage operation while maintaining or improving transistor performance. The "dual-gate" transistor has recently been used for high-performance processors; however, this is its first use within a DRAM device.
Next-Generation Memory: DDR3 SDRAM
In addition to the significant increase in data transfer, the 512 Megabit DDR3 SDRAM device will also provide improved power consumption--1.5 Volt vs. the 1.8 Volt operation that is currently available in DDR2 architecture. A newly introduced automatic calibration feature for the output buffer will enhance the ability to control the system timing budget during variations in voltage and temperature.
Elpida's 512 Megabit DDR3 SDRAM will also utilize 90 nm process technology. Elpida has already established volume production at 90 nm which, in turn, will allow production on the newly developed DDR3 devices to be ramped as necessary to satisfy market demand.
Availability
Elpida's 512 Megabit DDR3 device is expected to ship as customer samples by the end of 2005. Initial production is anticipated for 2006 in accordance with market demand. Elpida also plans to develop higher density DDR3 products such as 1 Gigabit and 2 Gigabit.
