Globalfoundries On Track For 14nm Process Technology
Globalfoundries CEO Ajit Manocha has praised his firm
for what he called a "remarkable quarter" in Q411, and
promised that the foundry was on track to "keep the
momentum going," after a year plagued with difficulties and setbacks.
Manocha added that Globalfoundries' new fab in upstate
New York is due to start ramping imminently, with
20-nm expected to be introduced in June. Manocha also
said Globalfoundries' Dresden facility would continue
with 32-nm and 28-nm manufacturing, while plans were
already underway for 14-nm.
These were among the comments the foundry's executive made during an interview with EE Times.
Manocha also dismissed Globalfoundries' competitor TSMC and its high-k metal gate technology they use for their chips, as only having shipped "a few thousand wafers" with high-k metal gate in 2011," noting that his firm had shipped well over 700, 000.
However the gate-first HKMG has proved particularly difficult to ramp and now the company will need to make another challenging transition as it follows Intel and TSMC to gate-last HKMG at 20-nm. Manocha agreed that scaling from 40-nm to 32-nm had indeed presented a challenge, and that it would be yet another bridge to cross reversing the metal gate going from 28-nm to 20-nm, a bigger challenge, he said, would likely come from the photo lithography side of the process and then moving to 450 mm wafers.
These were among the comments the foundry's executive made during an interview with EE Times.
Manocha also dismissed Globalfoundries' competitor TSMC and its high-k metal gate technology they use for their chips, as only having shipped "a few thousand wafers" with high-k metal gate in 2011," noting that his firm had shipped well over 700, 000.
However the gate-first HKMG has proved particularly difficult to ramp and now the company will need to make another challenging transition as it follows Intel and TSMC to gate-last HKMG at 20-nm. Manocha agreed that scaling from 40-nm to 32-nm had indeed presented a challenge, and that it would be yet another bridge to cross reversing the metal gate going from 28-nm to 20-nm, a bigger challenge, he said, would likely come from the photo lithography side of the process and then moving to 450 mm wafers.