An evolution of the existing GDDR5 specification, GDDR5X was developed with a focus on increased data rates in the range of 10-14Gb/s, essentially doubling the bandwidth of today’s mainstream GDDR5 devices. There have been a variety of rumors in the industry about GDDR5X availability timeframes, so Micron clarified that its GDDR5X program is in full swing and first components have already completed manufacturing. The company plans to hit mass production this summer.
The team at Micron's Graphics DRAM Design Center in Munich, Germany, has functional devices earlier than expected, and the components are performing at data rates of more than 13Gb/s. Memory components mature as they move through the development and manufacturing process. Micron's first generation GDDR5X is an 8Gb (1GB) density manufactured on our 20-nanometer process technology.

The JEDEC specification for GDDR5X was published in January. In addition to utilizing a number of features from the GDDR5 specification, GDDR5X incorporates a number of new features. With first components becoming available, it is now proven that QDR mode is the path to achieve the industry’s fastest data rate (13Gbps and higher) on a discrete memory device.

Compared to GDDR5, these ultra-high data rates were achieved at an improved power consumption per transmitted bit due to VDD/VDDQ of 1.35V, while not gating maximum speed of the device. Micron also added features to improve system signal integrity: a new package with reduced ball pitch enables shorter PCB traces, which improves electrical performance.

Features / benefits:

• QDR mode: Highest data rate in the industry – >13Gbps achieved to date
• VDD/VDDQ 1.35V: Improved power per bit
• 190-ball FBGA Package, 0.65mm pitch: Smaller outline – improved electrical performance

Micron is currently ramping GDDR5X to mass production, and will be announcing sample dates later this spring.